MIT6_012s09_lec17

MIT6_012s09_lec17 - MIT OpenCourseWare http://ocw.mit.edu...

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Unformatted text preview: MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms . Lecture 17 The Bipolar Junction Transistor (I) Forward Active Regime Outline The Bipolar Junction Transistor (BJT): structure and basic operation I-V characteristics in forward active regime Reading Assignment: Howe and Sodini; Chapter 7, Sections 7.1, 7.2 6.012 Spring 2009 Lecture 17 1 1. BJT: structure and basic operation n+ polysilicon contact metal contact to base to n+ emitter region \ / A' I 'field oxide n+- p - n sandwich (intrinsic npn transistor) (a) edge of n+ buried layer Bipolar Junction Transistor: excellent for analog and fkont-end communications applications. 6.012 Spring 2009 Lecture 17' NPN BJT Collector Characteristics Similar to test circuit as for an n-channel MOSFET except I B is the control variable rather than V BE V CE I C = I C ( I B , V CE ) (a) 1 50 100 150 200 250 300 I C ( A) V CE (V) 6 (b) 1 2 3 4 8 I B = 1 A I B = 2 A (reverse active) (forward active) (saturation) I B = 0 (cutoff) I B = 500 nA I B = 1 A I B = 1.5 A I B = 2 A I B = 2.5 A I B + 5 4 3 2 6.012 Spring 2009 Lecture 17 3 Close enough for minority carriers to interact can diffuse quickly through the base Far apart enough for depletion regions not to interact prevent punchthrough Simplified one-dimensional...
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This note was uploaded on 09/24/2010 for the course EE 6.012 taught by Professor Charlessodini during the Spring '08 term at MIT.

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MIT6_012s09_lec17 - MIT OpenCourseWare http://ocw.mit.edu...

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