MIT6_012s09_lec06

MIT6_012s09_lec06 - MIT OpenCourseWare http/ocw.mit.edu...

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MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .
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Lecture 6 PN Junction and MOS Electrostatics(III) Metal-Oxide-Semiconductor Structure Outline 1. Introduction to MOS structure 2. Electrostatics of MOS in thermal equilibrium 3. Electrostatics of MOS with applied bias Reading Assignment: Howe and Sodini, Chapter 3, Sections 3.7-3.8 6.012 Spring 2009 Lecture 6 1
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1. Introduction Metal-Oxide-Semiconductor structure MOS at the heart of the electronics revolution: Digital and analog functions Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is key element of Complementary Metal- Oxide-Semiconductor (CMOS) circuit family Memory function Dynamic Random Access Memory (DRAM) Static Random Access Memory (SRAM) Non-Volatile Random Access Memory (NVRAM) Imaging Charge Coupled Device (CCD) and CMOS cameras Displays Active Matrix Liquid Crystal Displays (AMLCD) 6.012 Spring 2009 Lecture 6 2 Metal interconnect to gate Metal interconnect to bulk 0 x Gate oxide ε ox = 3.9 ε o p-type ε s = 11.7 ε o n + polysilicon gate Figure by MIT OpenCourseWare.
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2. MOS Electrostatics in equilibrium Idealized 1D structure: Metal : does not tolerate volume charge charge can only exist at its surface Oxide : insulator and does not have volume
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This note was uploaded on 09/24/2010 for the course EE 6.012 taught by Professor Charlessodini during the Spring '08 term at MIT.

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MIT6_012s09_lec06 - MIT OpenCourseWare http/ocw.mit.edu...

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