MIT6_012s09_lab02

MIT6_012s09_lab02 - MIT OpenCourseWare http:/ocw.mit.edu...

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MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .
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6.012 Microelectronic Devices and Circuits Prof. C.G. Sodini Device Characterization Project #2 DEVICE CHARACTERIZATION AND CIRCUIT DESIGN Please write your recitation time on your project report. Introduction In this project, you will characterize the current-voltage characteristics of an npn bipolar junction transistor (BJT) and an n-MOSFET. To do this, you will use the MIT Microelectronics WebLab. The npn BJT is available in location 3 of WebLab. It is labeled “npn BJT” (2N3904). The n-MOSFETs are in location 2, labeled “nMOSFET” (2N7000). This exercise involves three phases: (i) characterization of the devices, large and small signal parameter extraction, (ii) using the measurements to choose bias voltages for a common collector amplifier to meet amplifier specifications, and (iii) using the measurements to determine small signal two port model parameters at the bias point. Take the measurements specified in the following pages. When you are happy with the results (as judged by the characteristics displayed through the web), download the data to your local machine for more graphing and further analysis. You will find it useful to study the contents of Appendix A, which describes what the measured data should roughly look like and gives a short overview of the relevant equations. The WebLab server is available at http://ilab.mit.edu/ Important: Only hand in items for which you are asked. Do not hand in extra items, such as dumps of your measured data. Late Policy: Late projects will only receive 50% of the normal grade. You are advised to measure the devices early. If you start only one or two days before the project is due, and for whatever reasons you cannot get your measurements done, you will not be granted an extension. While we try to fix problems (blown devices, etc.) as soon as possible, the response time may not be instant.
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Design of Common Collector Amplifier with NMOS Current Source In this assignment you will characterize both an npn-BJT and an NMOS transistor, (separately), and use the measurements to design a common collector (emitter follower)
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MIT6_012s09_lab02 - MIT OpenCourseWare http:/ocw.mit.edu...

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