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MIT6_012s09_exam03_final_2005

MIT6_012s09_exam03_final_2005 - MIT OpenCourseWare...

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MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms .
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_____________________________________________________________ 6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME___________________________________ 1___________ RECITATION TIME___________________________ 2___________ 3___________ 4___________ 5___________ Total______________ General guidelines (please read carefully before starting): Make sure to write your name on the space provided above. All answers should be given in the space provided. Please do not turn in any extra material. If you need more space, use the back page. You have 180 minutes to complete the quiz. Where required, make reasonable approximations and state them. Partial credit will be given for setting up problems without calculations. NO credit will be given for answers without reasons. Use the symbols utilized in class for the various physical parameters, i.e. N d , n o , etc. Every numerical answer must have the proper units next to it. Points will be subtracted for answers without units or with wrong units. Use the following fundamental constants and physical parameters for silicon at room temperature. n i = 1.0 x 10 10 cm -3 kT/q = 0.025V q = 1.6 x 10 -19 C ε S = 1.0 x 10 -12 F/cm ε OX = 3.45 x 10 -13 F/cm 1
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Problem 1 [40 points] An ideal n-MOSFET has transconductance, g m characteristics as shown below: g m V BS = 0V V DS = 1V V GS In addition, C g is measured to be 0.1725pF at V DS = 0V , V GS = 3V , V BS = 0V . W = 10 μ m and L = 5 μ m . Neglect channel length modulation and neglect any overlap capacitances. Assume N a = 10 17 cm -3 .
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