MIT6_012s09_exam03_final_2005

MIT6_012s09_exam03_final_2005 - MIT OpenCourseWare...

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Unformatted text preview: MIT OpenCourseWare http://ocw.mit.edu 6.012 Microelectronic Devices and Circuits Spring 2009 For information about citing these materials or our Terms of Use, visit: http://ocw.mit.edu/terms . _____________________________________________________________ 6.012 Electronic Devices and Circuits Spring 2005 May 16, 2005 Final Exam (200 points) -OPEN BOOK- Problem NAME___________________________________ 1___________ RECITATION TIME___________________________ 2___________ 3___________ 4___________ 5___________ Total______________ General guidelines (please read carefully before starting): • Make sure to write your name on the space provided above. • All answers should be given in the space provided. Please do not turn in any extra material. If you need more space, use the back page. • You have 180 minutes to complete the quiz. • Where required, make reasonable approximations and state them. • Partial credit will be given for setting up problems without calculations. NO credit will be given for answers without reasons. • Use the symbols utilized in class for the various physical parameters, i.e. N d , n o , etc. • Every numerical answer must have the proper units next to it. Points will be subtracted for answers without units or with wrong units. • Use the following fundamental constants and physical parameters for silicon at room temperature. n i = 1.0 x 10 10 cm-3 kT/q = 0.025V q = 1.6 x 10-19 C ε S = 1.0 x 10-12 F/cm ε OX = 3.45 x 10-13 F/cm 1 Problem 1 [40 points] An ideal n-MOSFET has transconductance, g m characteristics as shown below: g m V BS = 0V V DS = 1V V GS In addition, C g is measured to be 0.1725pF at V DS = 0V , V GS = 3V , V BS = 0V ....
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This note was uploaded on 09/24/2010 for the course EE 6.012 taught by Professor Charlessodini during the Spring '08 term at MIT.

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MIT6_012s09_exam03_final_2005 - MIT OpenCourseWare...

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