This preview shows pages 1–2. Sign up to view the full content.
This preview has intentionally blurred sections. Sign up to view the full version.View Full Document
Unformatted text preview: Spring 2007 6.720J/3.43J Integrated Microelectronic Devices Prof. J. A. del Alamo Device Characterization Project 2 - March 14, 2007 . 18 m n-MOSFET characterization Due: April 4, 2007 at lecture In this second device characterization project of 6.720J/3.43J, an integrated n-channel MOS- FET belonging to the 0 . 18 m logic CMOS technology generation is characterized in detail. Several devices of this kind are available at our Microelectronics Device Characterization Laboratory courtesy of National Semiconductors. The MOSFET is connected as shown in the schematic on line (use any of the devices labeled 0.18 um nMOSFET ). Take the measurements specified below. Once satisfied with the look of the data displayed through the web, you should download the data set for graphing and further analysis using your preferred software tool (typically MATLAB or EXCEL). For all the following measurements, hold V GS between 0 and 2 V and V DS between 0 and 2 V . Unless specified, the back bias should be V BS = 0 V . When relevant, examine V BS between 0 and 2 V . At all times, keep a compliance of 20 mA in the drain, 1 A on the gate and 1 mA on the body. Refer to Appendix A at end of this document for basic information about the MOSFET. Here is your assignment: 1) (10 points) Measure and download the output characteristics , that is, I D vs. V DS with V GS as parameter. In your local machine graph the output characteristics ( graph 1 , linear scales). I D 2) (10 points) Program the HP4155 to calculate the output conductance g d = V DS . Down- load g d . Graph g d vs. V DS with V GS as parameter ( graph 2 , linear scales). This measurement is best done in conjunction with 1) above. 3) (10 points) Measure and download the transfer characteristics , that is I D vs. V GS with V DS as parameter. In your local machine, graph the transfer characteristics ( graph 3 , linear scales). 4) (10 points) Program and download the transconductance g m = I D . Graph g m vs. V GS V GS with V DS as parameter ( graph 4 , linear scales). This measurement is best done in conjunction with 3) above. Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]....
View Full Document
- Spring '07