lecture39

lecture39 - 6.720J/3.43J- Integrated Microelectronic...

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Unformatted text preview: 6.720J/3.43J- Integrated Microelectronic Devices- Spring 2007 Lecture 3 9-1 Lecture 39- Bipolar Junction Transistor (cont.) May 11, 2007 Contents: 1. Evolution of BJT design 2. Bipolar issues in CMOS Announcement: Final Exam : Wednesday, May 23, 1:30-4:30 PM Covers entire subject, but will emphasize lectures #24-39 (MOSFET and BJT). Calculator required. Open book. Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J- Integrated Microelectronic Devices- Spring 2007 Lecture 39-2 Key questions How has BJT design evolved since its first integration? How is it likely to evolve in the future? Bipolar issues in CMOS??? Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J- Integrated Microelectronic Devices- Spring 2007 Lecture 39-3 1. Evolution of BJT design Junction-isolated BJT B E B C p + p n + p + n + p + n n + p First integrated BJT. Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J- Integrated Microelectronic Devices- Spring 2007 Lecture 39-4 Poly-Si emitter BJT n + n + p + p + p + n + n p E B B C n + polySi p Problem of metal-contacted emitter: emitter thickness scales badly. p E (x) p E p E (V BE ) n i 2 N E I B p Eo = -W E x W E I B F Poly-Si extension effectively increases emitter thickness: F pre- served when W E scales down. Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J- Integrated Microelectronic Devices- Spring 2007 Lecture 39-5 Single-poly self-aligned BJT n +-polySi p + p + p silicide n + Unique feature: A C-extrinsic base self-aligned to intrinsic device A E , R Bext Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J- Integrated Microelectronic Devices- Spring 2007 Lecture 39-6 Double-poly self-aligned BJT Unique feature:-base contacts made on polySi over isolation A C , smaller foot- A E print Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007....
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lecture39 - 6.720J/3.43J- Integrated Microelectronic...

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