lecture36

lecture36 - 6.720J/3.43J - Integrated Microelectronic...

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Unformatted text preview: 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 36-1 Lecture 36 - Bipolar Junction Transistor (cont.) May 4, 2007 Contents: 1. Current-voltage characteristics of ideal BJT (cont.) 2. Charge-voltage characteristics of ideal BJT 3. Small-signal behavior of ideal BJT Reading material: del Alamo, Ch. 11, 11.2 (11.2.5), 11.3, 11.4 (11.4.1) Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 36-2 Key questions How do the output characteristics of the ideal BJT look like? How do the charge-voltage characteristics of the ideal BJT look like? What is the topology of the small-signal equivalent circuit model of the ideal BJT in FAR? What are the key dependencies of its elements? Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 36-3 1. Current-voltage characteristics of ideal BJT (cont.) Ideal BJT current equations (superposition of forward active + re- verse): I C = I S (exp qV BE kT exp qV BC kT ) I S R (exp qV BC kT 1) I B = I S F (exp qV BE kT 1) + I S R (exp qV BC kT 1) I E = I S F (exp qV BE kT 1) I S (exp qV BE kT exp qV BC kT ) Equivalent circuit model representation: C I S (exp qV BC -1) R kT qV BE qV BC B I S (exp - exp ) kT kT I S (exp qV BE -1) F kT E Complete model has only three parameters: I S , F , and R . Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].---- 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 36-4 Common-emitter output I-V characteristics vs. V CB : I C C 0 forward active saturation cut-off - + V BC I B + B V CE + V BE I B =0 E 0 V CB V BC,on vs. V CE : I C C saturation I B =0 E reverse 0 cut-off V CE =V CB +V BE 0 forward active - + V BC I B + B V CE + V BE V CE,sat V CEsat = V BCon + V BEon Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 36-5 I C vs. V CB with I B as parameter: Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007....
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lecture36 - 6.720J/3.43J - Integrated Microelectronic...

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