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Unformatted text preview: 6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 361 Lecture 36  Bipolar Junction Transistor (cont.) May 4, 2007 Contents: 1. Currentvoltage characteristics of ideal BJT (cont.) 2. Chargevoltage characteristics of ideal BJT 3. Smallsignal behavior of ideal BJT Reading material: del Alamo, Ch. 11, 11.2 (11.2.5), 11.3, 11.4 (11.4.1) Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 362 Key questions How do the output characteristics of the ideal BJT look like? How do the chargevoltage characteristics of the ideal BJT look like? What is the topology of the smallsignal equivalent circuit model of the ideal BJT in FAR? What are the key dependencies of its elements? Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 363 1. Currentvoltage characteristics of ideal BJT (cont.) Ideal BJT current equations (superposition of forward active + re verse): I C = I S (exp qV BE kT exp qV BC kT ) I S R (exp qV BC kT 1) I B = I S F (exp qV BE kT 1) + I S R (exp qV BC kT 1) I E = I S F (exp qV BE kT 1) I S (exp qV BE kT exp qV BC kT ) Equivalent circuit model representation: C I S (exp qV BC 1) R kT qV BE qV BC B I S (exp  exp ) kT kT I S (exp qV BE 1) F kT E Complete model has only three parameters: I S , F , and R . Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 364 Commonemitter output IV characteristics vs. V CB : I C C 0 forward active saturation cutoff  + V BC I B + B V CE + V BE I B =0 E 0 V CB V BC,on vs. V CE : I C C saturation I B =0 E reverse 0 cutoff V CE =V CB +V BE 0 forward active  + V BC I B + B V CE + V BE V CE,sat V CEsat = V BCon + V BEon Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J  Integrated Microelectronic Devices  Spring 2007 Lecture 365 I C vs. V CB with I B as parameter: Cite as: Jess del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007....
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 Spring '07
 JesúsdelAlamo
 Transistor, Volt

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