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lecture33 - 6.720J/3.43J Integrated Microelectronic Devices...

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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-1 Lecture 33 - The ”Short” ± Metal-Oxide-Semiconductor Field-Effect ± Transistor (cont.) April 30, 2007 Contents: 1. MOSFET scaling (cont.) 2. Evolution of MOSFET design Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-2 Key questions How has MOSFET scaling been taking place? Are there fundamental limits to MOSFET scaling? How far will MOSFET scaling go? Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-3 1. Scaling (cont.) Scaling goal: extract maximum performance from each generation (maximize I on ), for a given amount of: short-channel effects (DIBL), and off-current To preserve electrostatic integrity , scaling has proceeded in a har­ monious way: L ( ), W ( ), x ox ( ), N A ( ), x j ( ), and V DD ( ). Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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Illustration 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-4 of key trade-offs: I on vs. I off 1E-08 1E-07 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 I off ( µ A/ µ m) MIT SSR III CMOS Technology V dd =2 V 0 200 400 600 800 I on ( µ A/ µ m) Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-5 I on vs. DIBL Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-6 Limits to scaling The New York Times (Oct. 9, 1999)± Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. Text removed due to copyright restrictions. Markoff, John. "Chip Progress Forecast to Hit a Big Barrier." The New York Times (October 9, 1999).
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 33-7 Four kinds of limits: Thermodynamics: doping concentration in source and drain Physics: tunneling through gate oxide Statistics: statistical fluctuation of body doping Economics: factory cost tunneling through gate oxide in source and drain in body doping source gate drain
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