lecture32

lecture32 - 6.720J/3.43J Integrated Microelectronic Devices...

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Unformatted text preview: 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 32-1 Lecture 32 - The ”Short” Metal-Oxide-Semiconductor Field-Effect Transistor (cont.) April 27, 2007 Contents: 1. MOSFET scaling Reading assignment: P. K. Ko, ” Approaches to Scaling .” Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 32-2 Key questions • What happens if a MOSFET gate length is simply shrunk in size without changing anything else? • How should the MOSFET design change as it shrinks down in size? Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 32-3 1. MOSFET scaling Several driving forces for scaling down size of MOSFET: higher density circuits: SSI, MSI, LSI, VLSI, ULSI, RLSI, ... • higher performance: L I D τ switch • ↓⇒ ↑⇒ ↓ lower power consumption: L V DD • ↓⇒ ↓ Simple L scaling compromises electrostatic integrity and produces punchthrough (extreme case of short-channel effects): current To avoid punchthrough: N A V T I D • ↑⇒ ↑⇒ ↓ V DD I D • ↓⇒ ↓ x ox V T I D • ↓⇒ ↓⇒ ↑ p n + n + n + p n + n + n + deep uncontrolled Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 32-4 Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. Image by MIT OpenCourseWare. Adapted from Sze, S. M. Physics of Semiconductor Devices . 2nd ed. New York, NY: John Wiley & Sons, 1981, p. 470. ISBN: 9780471056614. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 32-5 Need smart way of scaling: • constant field scaling • constant voltage scaling • generalized scaling Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. Image by MIT OpenCourseWare. Adapted from Sze, S. M. Physics of Semiconductor Devices . 2nd ed....
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This note was uploaded on 09/24/2010 for the course EECS 6.720J taught by Professor Jesúsdelalamo during the Spring '07 term at MIT.

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lecture32 - 6.720J/3.43J Integrated Microelectronic Devices...

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