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lecture25 - 6.720J/3.43J Integrated Microelectronic Devices...

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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 25-1 Lecture 25 - The ”Long” Metal-Oxide-Semiconductor Field-Effect Transistor April 9, 2007 Contents: 1. Qualitative operation of the ideal MOSFET 2. Inversion layer transport 3. I-V characteristics of ideal MOSFET Reading assignment: del Alamo, Ch. 9, §§ 9.2-9.4 (9.4.1, 9.4.2) Announcements : Quiz 2: April 10, 7:30-9:30 PM; lectures #12-23. Open book. Calculator required . Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 25-2 Key questions How does lateral transport through the inversion layer take place? What are the most important regimes of operation of a MOS- FET? What are the key functional dependencies of the MOSFET drain current on the gate and drain voltage? Why under some conditions does the drain current saturate? Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 25-3 1. Qualitative operation of the ideal MOSFET Water analogy of MOSFET: Source : water reservoir Drain : water reservoir Gate : gate between source and drain reservoirs n + n + n + p V GS± V DS± source drain gate water Want to understand MOSFET operation as a function of: gate-to-source voltage (gate height over source water level) drain-to-source voltage (water level difference between reservoirs) Initially consider source tied up to body (substrate or back). Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 25-4 Three regimes of operation: Cut-off regime : MOSFET: V GS < V T , V GD < V T with V DS > 0. Water analogy: gate closed; no water can flow regardless of relative height of source and drain reservoirs. cut-off I D = 0 Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 25-5 Linear or Triode regime : MOSFET: V GS > V T , V GD > V T , with V DS > 0. Water analogy: gate open but small difference in height between source and drain; water flows. linear or triode Electrons drift from source to drain electrical current! V GS ↑ → | Q i | ↑ → I D V DS ↑ → E y ↑ → I D I D I D small V DS small V DS V GS >V T V DS 0 0 0 V DS V T V GS± Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
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