lecture22

Lecture22 - 6.720J/3.43J Integrated Microelectronic Devices Spring 2007 Lecture 22-1 Lecture 22 The Si surface and the Metal-Oxide-Semiconductor

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Unformatted text preview: 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 22-1 Lecture 22 - The Si surface and the Metal-Oxide-Semiconductor Structure (cont.) April 2, 2007 Contents: 1. Ideal MOS structure under bias (cont.) Reading assignment: del Alamo, Ch. 8, § 8.3 (8.3.2-8.3.4) Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 22-2 Key questions • What are the key simplifications that one can make to the Poisson- Boltzmann formulation in order to develop simple first-order models for the various regimes of operation of the MOS struc- ture? • How thick are the inversion and accumulations layers? Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 22-3 1. Ideal MOS structure outside equilibrium (cont.) Next few viewgraphs: results of calculations for: • W M = 4 . 04 eV (n + polySi gate) • x ox = 4 . 5 nm • N A = 6 × 10 17 cm − 3 T = 300 K • Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. Courtesy of S. Mertens, MIT. Used with permission. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 22-4 Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007....
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This note was uploaded on 09/24/2010 for the course EECS 6.720J taught by Professor Jesúsdelalamo during the Spring '07 term at MIT.

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Lecture22 - 6.720J/3.43J Integrated Microelectronic Devices Spring 2007 Lecture 22-1 Lecture 22 The Si surface and the Metal-Oxide-Semiconductor

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