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lecture17 - 6.720J/3.43J Integrated Microelectronic Devices...

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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 17-1 Lecture 17 - Metal-Semiconductor Junction March 14, 2007 Contents: 1. Ideal metal-semiconductor junction in TE 2. Ideal metal-semiconductor junction outside equilib- rium Reading assignment: del Alamo, Ch. 7, §§ 7.1, 7.2 Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 17-2 Key questions What happens when you bring together a metal and a semicon- ductor in intimate contact? What happens in a metal-semiconductor junction when you ap- ply a voltage to the metal with respect to the semiconductor? In a metal-semiconductor junction under bias, is there current flow? If so, how exactly does it happen? Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 17-3 1. Ideal metal-semiconductor junction in TE First, ideal metal-metal junction in TE: W M2 W M1 E o E o E F1 E F2 W M2 W M1 E o E o E F1 E F2 a) two metals far apart b) two metals just before contact E o E F W M1 W M2 q φ bi c) two metals in intimate contact dipole charge at interface built-in potential Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 17-4 Spatial extent of SCR in MM junction: a few nm Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 17-5 Can define local work function Think of photoelectric experiment vs. position: h υ th W M1 W M2 metal 1 metal 2 h υ - h υ th± metal 1 metal 2 W M1 W M2 x Can define local vacuum energy E o Shape of E o identical to potential energy 1 φ bi = ( W M 1 W M 2 ) q Ideal metal-semiconductor junction in TE Energy band line up depends on choice of metal and semiconductor.
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  • Spring '07
  • JesúsdelAlamo
  • Trigraph, Massachusetts Institute of Technology, schottky barrier, Walter H. Schottky, Jesús del Alamo

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