lecture14

lecture14 - 6.720J/3.43J - Integrated Microelectronic...

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Unformatted text preview: 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2004 Lecture 14-1 Lecture 14 - p-n Junction (cont.) March 8, 2007 Contents: 1. Ideal p-n junction out of equilibrium (cont.) Reading assignment: del Alamo, Ch. 7, § 7.2 ( § 7.2.3) Announcements: Quiz 1: March 13 , 7:30-9:30 PM; lectures #1-12 (up to SCR-type transport). Open book. Calculator required . Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2004 Lecture 14-2 Key questions • What are the dominant physics of current flow in a p-n junction under bias? • What underlies the rectifying behavior of the p-n junction? • What are the key assumptions that allow the development of a simple model for the I-V characteristics of a p-n diode? • What are the key dependencies of the current-voltage character- istics of the p-n diode? Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2004 Lecture 14-3 1. Ideal p-n junction out of equilibrium (cont.) I-V characteristics E c E v F e =0 a) equilibrium R G R G F h =0 E c E v b) forward bias F e F h R R G G F e F h E c E v c) reverse bias G G R R Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2004 Lecture 14-4 In TE: • balance between electron and hole flows across SCR • balance between G and R in QNR’s • I = 0 In forward bias: • energy barrier to minority carriers reduced • minority carrier injection • R > G in QNR’s • I ∼ e qV/kT In reverse bias: • energy barrier to minority carriers increased • minority carrier extraction • G > R in QNR’s • I saturates to a small value Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Fall 2004 Lecture 14-5 Key thinking to construct model for I-V characteristics: • junction voltage sets concentration of carriers with enough en- ergy to get injected; • rate of carrier injection set by minority carrier transport and G/R rates in quasi-neutral regions;...
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This note was uploaded on 09/24/2010 for the course EECS 6.720J taught by Professor Jesúsdelalamo during the Spring '07 term at MIT.

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lecture14 - 6.720J/3.43J - Integrated Microelectronic...

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