lecture12

lecture12 - 6.720J/3.43J - Integrated Microelectronic...

Info iconThis preview shows pages 1–4. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 11-1 Lecture 1 2 - Carrier Flow (cont.) March 2, 2007 Contents: 1. Transport in space-charge and high-resistivity regions 2. Carrier multiplication and avalanche breakdown Reading assignment: del Alamo, Ch. 5, § 5.7 Seminar: Matthias Passlack (Freescale Semiconductor) High Mo- bility III-V MOSFET Technology . March 6, 2007, 4-5 PM (reception at 3:30 PM). Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 11-2 Key questions • What characterizes space-charge-region-type situations? • How does impact ionization affect space-charge-region type sit- uations? Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY]. 6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 11-3 1. Transport in space-charge and high-resistivity regions In regions with very low carrier concentrations: • dielectric relaxation time long → majority carriers take a long time to screen out charge perturbations i.e. : for 10 12 cm − 3 Si ( ρ 10 4 Ω · cm ), τ d 10 ns • Debye length long → net charge can exist over substantial spa- tial extent i.e. : for 10 12 cm − 3 Si, L D 4 µm Transport physics quite different from QN regions. Key approximation: E independent of n, p : • E imposed from outside ( i.e. high resistivity region under bias), or • E set by spatial distribution of dopants ( depletion region ) Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. Cite as: Jesús del Alamo, course materials for 6....
View Full Document

This note was uploaded on 09/24/2010 for the course EECS 6.720J taught by Professor Jesúsdelalamo during the Spring '07 term at MIT.

Page1 / 11

lecture12 - 6.720J/3.43J - Integrated Microelectronic...

This preview shows document pages 1 - 4. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online