lecture12 - 6.720J/3.43J Integrated Microelectronic Devices...

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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 11-1 Lecture 1 2 - Carrier Flow (cont.) March 2, 2007 Contents: 1. Transport in space-charge and high-resistivity regions 2. Carrier multiplication and avalanche breakdown Reading assignment: del Alamo, Ch. 5, § 5.7 Seminar: Matthias Passlack (Freescale Semiconductor) High Mo- bility III-V MOSFET Technology . March 6, 2007, 4-5 PM (reception at 3:30 PM). Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 11-2 Key questions What characterizes space-charge-region-type situations? How does impact ionization affect space-charge-region type sit- uations? Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007. MIT OpenCourseWare (http://ocw.mit.edu/), Massachusetts Institute of Technology. Downloaded on [DD Month YYYY].
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6.720J/3.43J - Integrated Microelectronic Devices - Spring 2007 Lecture 11-3 1. Transport in space-charge and high-resistivity regions In regions with very low carrier concentrations: dielectric relaxation time long majority carriers take a long time to screen out charge perturbations i.e. : for 10 12 cm 3 Si ( ρ 10 4 Ω · cm ), τ d 10 ns Debye length long net charge can exist over substantial spa- tial extent i.e. : for 10 12 cm 3 Si, L D 4 µm Transport physics quite different from QN regions. Key approximation: E independent of n, p : • E imposed from outside ( i.e. high resistivity region under bias), or • E set by spatial distribution of dopants ( depletion region ) Cite as: Jesús del Alamo, course materials for 6.720J Integrated Microelectronic Devices, Spring 2007.
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