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939 - Graphoepitaxy of Self-Assembled Block Copolymers on...

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DOI: 10.1126/science.1159352 , 939 (2008); 321 Science et al. Ion Bita, Templates Patterned Copolymers on Two-Dimensional Periodic Graphoepitaxy of Self-Assembled Block This copy is for your personal, non-commercial use only. . clicking here colleagues, clients, or customers by , you can order high-quality copies for your If you wish to distribute this article to others . here following the guidelines can be obtained by Permission to republish or repurpose articles or portions of articles (this information is current as of May 31, 2010 ): The following resources related to this article are available online at www.sciencemag.org http://www.sciencemag.org/cgi/content/full/321/5891/939 version of this article at: including high-resolution figures, can be found in the online Updated information and services, http://www.sciencemag.org/cgi/content/full/321/5891/939/DC1 can be found at: Supporting Online Material found at: can be related to this article A list of selected additional articles on the Science Web sites http://www.sciencemag.org/cgi/content/full/321/5891/939#related-content http://www.sciencemag.org/cgi/content/full/321/5891/939#otherarticles , 4 of which can be accessed for free: cites 26 articles This article 76 article(s) on the ISI Web of Science. cited by This article has been http://www.sciencemag.org/cgi/content/full/321/5891/939#otherarticles 1 articles hosted by HighWire Press; see: cited by This article has been http://www.sciencemag.org/cgi/collection/mat_sci Materials Science : subject collections This article appears in the following registered trademark of AAAS. is a Science 2008 by the American Association for the Advancement of Science; all rights reserved. The title Copyright American Association for the Advancement of Science, 1200 New York Avenue NW, Washington, DC 20005. (print ISSN 0036-8075; online ISSN 1095-9203) is published weekly, except the last week in December, by the Science on May 31, 2010 www.sciencemag.org Downloaded from
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cessfully within a range of interaction values. The fact that there exists a window of tolerance sug- gests the possibility of added room for experimen- tal optimization to generate lower defect densities or even higher orders of density multiplication. For instance, it should be possible to change the brush layer to optimize the brush interactions in density multiplied patterns with L s = 54 nm in order to reduce the defect density below 10 4 (see Moiré patterns in fig. S2). A technological benchmark for the quality of the patterns is garnered from transferring the pattern to the underlying substrate. The block copolymer film produced by density multiplica- tion has a vertical side-wall profile suitable for pattern transfer. Using a lift-off technique, we fabricated 20-nm-tall Si pillars. We started with a block copolymer film like the one shown in Fig. 2F ( L s = 78 nm, L p = 39 nm) after remov- ing the PMMA cylinder and cleaned the pores with oxygen plasma. We deposited 7 nm of Cr by e-beam evaporation and removed the PS mask using a piranha solution leaving Cr dots on the surface (Fig. 4A). We used a CF 4 reactive ion etch to generate 20-nm Si pillars (Fig. 4B). The
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