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AEP 1200 Spring 2010 Exam 1 solution outline

# AEP 1200 Spring 2010 Exam 1 solution outline - Outline of...

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AEP 1200 1 Exam 1 Outline of Answers: AEP/ENGR 1200 Exam 1 - Given March 16, 2010 1. (20 points) Photolithography resolution: (a) If diffraction limits the resolution of a photolithography process to a minimum feature size of 200 nm when using an exposing wavelength 193 nm, what would you anticipate the minimum resolvable feature size to be if the light wavelength was 248 nm, assuming the optical system is otherwise the same? Explain why. Diffraction limits the resolution of the lithographic process and for projection lithography the minimum feature size if proportional to the exposing light wavelength. The minimum resolvable feature size would therefore be 200nm x (248/193) = ~260nm. (b) What light source exists for the 193 nm and 248 nm wavelength lithography? Excimer lasers. 2. (10 points) What determines the thickness of a spun-on resist layer? Spin speed (rotational velocity) and viscosity (or concentration ) of the solution. 3. (10 points) Explain how the use of phase-shifted-masks can reduce the optical proximity effect.

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AEP 1200 Spring 2010 Exam 1 solution outline - Outline of...

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