20101ee115A_1_ee115a_winter10Hw6

20101ee115A_1_ee115a_winter10Hw6 - EE115A Winter10 Homework...

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EE115A Frank Chang Winter10 Homework #6 Due Tue, Mar 9th, 2010 5PM Problem 1. Compute the transconductance (g m ) of a MOSFET in triode region. g m is defined as / D gs IV ∂∂ . Compare it with the transconductance in the saturation region. Which one is better? Problem 2. Determine the region of operation for each NMOS shown below. Assume V thn =0.4V Figure 1. Problem 3. An NMOS device with λ=0 has a g m of 1/(50Ω) and μ n C ox =200 μA/V 2 . a) Determine W/L if I D =0.5mA. b) Determine W/L if V GS -V TH =0.5V. c) Determine I D if V GS -V TH =0.5V. Problem 4. Determine how the transconductance of a MOSFET changes if a) W/L is doubled but I D remains constant. b) V GS -V TH is doubled but I D remains constant. c) I D is doubled but W/L remains constant. d) I D is doubled but V GS -V TH remains constant.
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Problem 5. Determine the region of operation for each of the PMOS shown below (figure 2). Assume |V thp | = 0.4V. Figure 2. Problem 6. Sketch I X as a function of V X for the circuits shown in figure 3. Assume V X goes from 0 to 1.8V and V
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20101ee115A_1_ee115a_winter10Hw6 - EE115A Winter10 Homework...

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