20101ee115A_1_ee115a_winter10Hw6

# 20101ee115A_1_ee115a_winter10Hw6 - EE115A Winter10...

This preview shows pages 1–3. Sign up to view the full content.

EE115A Frank Chang Winter10 Homework #6 Due Tue, Mar 9th, 2010 5PM Problem 1. Compute the transconductance (g m ) of a MOSFET in triode region. g m is defined as / D gs IV ∂∂ . Compare it with the transconductance in the saturation region. Which one is better? Problem 2. Determine the region of operation for each NMOS shown below. Assume V thn =0.4V Figure 1. Problem 3. An NMOS device with λ=0 has a g m of 1/(50Ω) and μ n C ox =200 μA/V 2 . a) Determine W/L if I D =0.5mA. b) Determine W/L if V GS -V TH =0.5V. c) Determine I D if V GS -V TH =0.5V. Problem 4. Determine how the transconductance of a MOSFET changes if a) W/L is doubled but I D remains constant. b) V GS -V TH is doubled but I D remains constant. c) I D is doubled but W/L remains constant. d) I D is doubled but V GS -V TH remains constant.

This preview has intentionally blurred sections. Sign up to view the full version.

View Full Document
Problem 5. Determine the region of operation for each of the PMOS shown below (figure 2). Assume |V thp | = 0.4V. Figure 2. Problem 6. Sketch I X as a function of V X for the circuits shown in figure 3. Assume V X goes from 0 to 1.8V and V
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

### Page1 / 3

20101ee115A_1_ee115a_winter10Hw6 - EE115A Winter10...

This preview shows document pages 1 - 3. Sign up to view the full document.

View Full Document
Ask a homework question - tutors are online