Prelim%202_2008 - M&AE 3780: Mechatronics Fall 2008 Dr....

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M&AE 3780: Mechatronics Fall 2008 Dr. Wickenheiser Prelim # 2 Exam Time: 1 hour 30 minutes I pledge that I have not given or received any assistance in taking this exam. I have only utilized the equation formula sheet submitted upon completion of the examination. Printed Name Student Signature 1
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Problem 1: (15 points) This question should be answered using a combination of a few sentences, equations, and diagrams. Well written essays or full derivations are not necessary. Both BJTs and MOSFETs can become saturated under certain conditions. Describe these conditions both mathematically and physically (i.e. describe what is happening inside the transistor device). You need only consider npn BJTs and n-type enhancement-mode MOSFETs. 2
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Problem 1: (Extra room for work) 3
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(20 points) Find the power dissipated by the emitter resistor R E in the circuit shown in Figure 1. You are given the following values: R B = 10 k Ω , R E = 20 Ω , V BB = 5V, V CC = 10V, and, for the transistor: V γ = 0.7V, V CEsat = 0.2V, and β = 100. Figure 1
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This note was uploaded on 10/02/2010 for the course MAE 3780 taught by Professor Wickenhieser during the Fall '08 term at Cornell University (Engineering School).

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Prelim%202_2008 - M&AE 3780: Mechatronics Fall 2008 Dr....

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