MIME 262 - Final Exam Review 3

MIME 262 - Final Exam Review 3 - Questions on Basics for...

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Questions on Basics for Material Properties For questions in this area, you should also review recommended homework and concept checks for the appropriate chapters and sections based on the master study guide. a) Calculate the density of Si in atoms/m 3 . The mass density of Si is 2.33 g/cm 3 . b) The Si is doped with 1 phosphorous atom for every 1,000,000 Si atoms. Calculate the atomic concentration of P in this sample. State any assumptions you have made. c) The conductivity of a semiconductor is typically determined from the equation below. Define each variable in this equation, including units. h e e p e n P V ± d) A sample of Si, doped with the amount of phosphorous indicated in part (b), will be used for a new device developed by your company. Your colleague has measured a drift velocity of the charge carriers of 110 m/s when an electric field strength of 1.11 kV/m is applied. i. Determine the conductivity of the Si specimen, and ii. Identify the charge carriers (state your reasoning). As microelectronic devices shrink, a constant issue is heat management. Power supplied to a chip will cause significant heat that needs to be conducted away from the temperature-sensitive semiconductor materials. What
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This note was uploaded on 10/02/2010 for the course ENGINEERIN MIME 262 taught by Professor Chrimik during the Fall '10 term at McGill.

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MIME 262 - Final Exam Review 3 - Questions on Basics for...

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