Modelling transport in single electron transistor

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Modelling transport in single electron transistor This article has been downloaded from IOPscience. Please scroll down to see the full text article. 2009 J. Phys.: Conf. Ser. 187 012060 (http://iopscience.iop.org/1742-6596/187/1/012060) Download details: IP Address: 130.245.209.124 The article was downloaded on 19/04/2010 at 02:00 Please note that terms and conditions apply. View the table of contents for this issue, or go to the journal homepage for more Home Search Collections Journals About Contact us My IOPscience
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Modelling transport in single electron transistor Dinh Sy Hien, Huynh Lam Thu Thao and Le Hoang Minh HCM University of Natural Sciences, 227 Nguyen Van Cu Street, 5 District, Ho Chi Minh City, Vietnam E-mail: huynhlamthao1980@yahoo.com Abstract . We introduce a model of single electron transistor (SET). Simulation programme of SET is used as the exploratory tool in order to gain better understanding of process and device physics. This simulator includes a graphic user interface (GUI) in Matlab. The SET was simulated using GUI in Matlab to get current-voltage (I-V) characteristics. In addition, effects of device capacitance, bias, temperature on the I-V characteristics were obtained. In this work, we review the capabilities of the simulator of the SET. Typical simulations of the obtained I-V characteristics of the SET are presented. Keywords: Coulomb blockable oscillation, single electron transistor, graphic user interface, I-V characteristics. 1. Introduction Incredible progress in microelectronics has pushed the MOSFET dimension toward the nanoscale limits (10 nm). In the future it is probable that MOSFETs will be replaced by fundamental new devices, such as single electron transistors (SET). SETs have recently attracted much attention because of their nano feature size, ultralow power dissipation, new functionalities and CMOS compatible fabrication process. SET shows unique advantages in terms of low power consumption and of new characteristics related to its Coulomb blockage oscillations. Until now, only two compact analytical models (Uchida et al , for single gate resistive symmetric SET [1] and Mahapatra et al , for asymmetric SET [2]) have been reported. We propose an improved model, which is more flexible and can be adapted for symmetrical and asymmetrical device geometries. The aim of this work is to propose a model of SET, to build a simulator, and to simulate current- voltage characteristics of SET using graphic user interface (GUI) in Matlab.
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