Practice Test 1

Practice Test 1 - There are 4 problems in this exam. In...

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1 There are 4 problems in this exam. In taking the examination, you agree that all work recorded herein is your own. A student caught in the act of cheating will be given a grade of F on this examination. All work is to be done on the attached sheets. Write your name on the top of every sheet. Useful Parameters: 5 Boltzmann Constant 8.62 10 eV kx K 0 10 3 0 For Silicon, lattice constant 5.43A, 1.12 , 1.5 10 300 gi a E eV n x cm at T K
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2 Problem 1 (25 points) In a silicon semiconductor, assume 4 g CF E EE . a) (5 points) Calculate the probability that an energy state at 0.1 C E E eV is occupied by an electron at T=0. b) (5 points) Calculate the probability that an energy state at 0.1 V E E eV is occupied by a hole at T=0. c) (15 points) Repeat part a) and b) at T=500K
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3 Problem 2 (25 points) Assume the density of states for a given semiconductor is constant equal to K in the conduction band and valence band. a) (10 points) Determine an expression for 0 n assuming the Boltzmann approximation is valid. b) (10 points) Determine an expression for 0 p assuming the Boltzmann approximation
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This note was uploaded on 10/03/2010 for the course ESE 231 taught by Professor Kamoua,r during the Spring '08 term at SUNY Stony Brook.

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Practice Test 1 - There are 4 problems in this exam. In...

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