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Practice Test 2

# Practice Test 2 - Name Problem 1(25 points Consider a...

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1 Name: ____________________________________ Problem 1 (25 points) Consider a silicon pn junction under thermal equilibrium. Assume 1.12 g E eV , 10 3 1.5 10 i n x cm , kT = 0.026eV. a) ( 10 points) Plot the energy band diagram and qualitatively plot the electric field, charge density, and potential across the pn junction. b) (10 points) Determine the maximum doping in the p region and n region such that the semiconductor remains nondegenerate. c) (5 points) Determine the maximum built-in voltage V bi in a nondegenerate silicon pn junction.

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2 Problem 2 (25 points) Consider a one sided n + p junction. The junction capacitance is measured at the following three reverse bias voltages: V R C j (F/cm 2 ) 0 2.3x10 -8 3 1.05x10 -8 6 7.82x10 -9 Assume 10 3 1.5 10 i n x cm , (kT/e) = 0.026 V, s = 11.7x8.854x10 -14 F/cm. a) (10 points) Estimate the doping N A b) (10 points) Estimate the built-in voltage V bi c) (5 points) Estimate the doping N D
3 Problem 3 (25 points) Consider a p + nn + junction as shown below. Assume the length of the middle n-region is 10 m and the doping is N D . The critical electric field is 4x10 5 V/cm and s

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