hw5 - EE114 Autumn 09/10 R Dutton Page 1 of 3...

Info iconThis preview shows pages 1–2. Sign up to view the full content.

View Full Document Right Arrow Icon
EE114 Autumn 09/10 R. Dutton Page 1 of 3 Last modified 10/20/2009 9:35:00 PM HOMEWORK #5 (Due: Friday, October 30, 2009, noon PT) In this problem set, please refer to EE114 technology device parameters from lecture 7 slide 12 whenever you need device constants in your calculations, except where you are told to explicitly ignore terms. 1. Consider the two source follower circuits shown in Fig. 1a and Fig. 1b. a) Suppose that the output voltage swings from 2.5V to 4V in both circuits. Calculate the corresponding voltage swings at the gate nodes, for R L =1k Ω and R L =1M Ω . Determine these values using the transistor’s large signal model. Summarize your results in a table. Explain how different values for R L and how the two different bulk connection schemes effect the required input voltages. b) Draw a small signal equivalent for the circuit of Fig. 1a. Find an analytical expression for the low frequency small signal gain a vo =v o /v i as a function of R L and the DC voltages V I and V O . Calculate the small signal gain at V O =2.5V and V O =4V using R L =1k Ω . Calculate the percent change in small signal gain when V O changes from 2.5V to 4V. c)
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full Document Right Arrow Icon
Image of page 2
This is the end of the preview. Sign up to access the rest of the document.

{[ snackBarMessage ]}

Page1 / 3

hw5 - EE114 Autumn 09/10 R Dutton Page 1 of 3...

This preview shows document pages 1 - 2. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online