hw5 - EE114 Autumn 09/10 R Dutton Page 1 of 3...

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EE114 Autumn 09/10 R. Dutton Page 1 of 3 Last modified 10/20/2009 9:35:00 PM HOMEWORK #5 (Due: Friday, October 30, 2009, noon PT) In this problem set, please refer to EE114 technology device parameters from lecture 7 slide 12 whenever you need device constants in your calculations, except where you are told to explicitly ignore terms. 1. Consider the two source follower circuits shown in Fig. 1a and Fig. 1b. a) Suppose that the output voltage swings from 2.5V to 4V in both circuits. Calculate the corresponding voltage swings at the gate nodes, for R L =1k Ω and R L =1M Ω . Determine these values using the transistor’s large signal model. Summarize your results in a table. Explain how different values for R L and how the two different bulk connection schemes effect the required input voltages. b) Draw a small signal equivalent for the circuit of Fig. 1a. Find an analytical expression for the low frequency small signal gain a vo =v o /v i as a function of R L and the DC voltages V I and V O . Calculate the small signal gain at V O =2.5V and V O =4V using R L =1k Ω . Calculate the percent change in small signal gain when V O changes from 2.5V to 4V. c)
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This note was uploaded on 10/07/2010 for the course EE 114 taught by Professor Murmann during the Fall '08 term at Stanford.

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hw5 - EE114 Autumn 09/10 R Dutton Page 1 of 3...

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