course230B1

course230B1 - ECE 230B: Winter 2010 Solid-State Electronic...

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ECE 230B: Winter 2010 Solid-State Electronic Devices Professor Yuan Taur lectrical & Computer Engineering Electrical & Computer Engineering University of California, San Diego 1/5/2010 Yuan Taur 1
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CE 230B: Winter 2010 ECE 230B: Winter 2010 Solid-State Electronic Devices Prerequist: ECE 135A, B, or equivalent and ECE 230A Instructor: Yuan Taur Office: EBU1-3801 Phone: 534-3816 taur@ece.ucsd.edu ffice hour: Monday Friday 11 2 Office hour: Monday, Friday, 11-12 Course website— http://ece-classweb.ucsd.edu/winter10/ece230b/ his course covers the physics of solid tate electronic devices including This course covers the physics of solid-state electronic devices, including p-n junctions, MOS devices, field-effect transistors, bipolar transistors, etc. Principles of CMOS and bipolar scaling to nanometer dimensions and their high frequency performance in digital and analog circuits will be taught. 1/5/2010 2
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Topics to be Covered 1) Band diagram, Fermi level, Poisson’s eq., Carrier transport (1.5 wks) 2) P-n junction (1 wk) 3) MOS device (1 wk) 4) MOSFETs (1.5 wks) 5) CMOS scaling and design (1.5 wks) 6) CMOS performance factors (1 wk) 7) Bipolar transistors (1.5 wks) 8) SiGe bipolar device (1 wk) Textbook: “Fundamentals of Modern VLSI Devices, 2 nd ed.” 1/5/2010 3 , Y. Taur and T. H. Ning, Cambridge Univ. Press (2009)
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Homework and Grading Policy gy Biweekly homework without handing in. Answers posted on class web. 20%--Two quizes (open book, calculator allowed). 20%--Midterm (Closed book, calculator and one page of one-sided notes allowed). 0% inal (Closed book calculator and 60%--Final (Closed book, calculator and one page of two-sided notes allowed). 1/5/2010 4
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Electron Energy Levels and Bands Discrete electron energy vels in an atom: Broadening into electron nergy bands in a solid: levels in an atom: energy bands in a solid: here are forbidden energy gaps between 1/5/2010 5 There are forbidden energy gaps between allowed electron energy bands.
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The Origin of Energy Gap in a Crystalline Solid 1/5/2010 6
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The Origin of Energy Gap in a Crystalline Solid rom Kittel) 1/5/2010 7 (From Kittel)
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Crystalline Lattice 1/5/2010 8
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Energy Band Structures 1/5/2010 9
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Metals, Insulators, and Semiconductors Insulators: E g > 4-5 eV 1/5/2010 10 Semiconductors: E g < 4-5 eV
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Metals, Insulators, and Semiconductors (From Muller and Kamins) 1/5/2010 11
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Energy Band Diagram of Silicon Hole nergy Conduction band eeg y E c E g E i E v 1 12 eV Electron nergy Valence band E g = 1.12 eV kT/q = 0.026 V 300 K Free electron ( ) energy 1/5/2010 12 @ 300 K Free hole (+)
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Density of States N ( E ) dE : Number of electronic states per unit volume with an energy between E and ( E + dE ) in the conduction band. From quantum mechanics, there is one allowed state in a phase space of volume ( Δ x Δ p x )( Δ y Δ p y )( Δ z Δ p z ) = h 3 .
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course230B1 - ECE 230B: Winter 2010 Solid-State Electronic...

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