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**Unformatted text preview: **N s = 0. Take 2 B = 1 V. (a) Choose the values of x s and N a such that the maximum depletion width is W dm = 0.1 m and the threshold voltage (at 2 B ) is V t = 0.3 V. (b) Following (a), what is the body effect coefficient, m , and the inverse slope of log sub-threshold current versus gate voltage (long-channel device)? (c) Following (a), how short a channel length can the device be scaled to before short-channel effect becomes severe? 5. Consider a p-type, linear retrograde doping profile of an nMOSFET below. The gate workfunction is that of n+ silicon and the gate oxide thickness is 20 nm. Assume x s = 0.1 m and N a = 10 17 cm-3 . (a) What is the maximum depletion width (take the 2 B value at x = x s )? (b) What is the threshold voltage? (c) What is the inverse slope of log[subthreshold current]? (d) What is the minimum channel length this device can be scaled to? N a x x s N(x)...

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