265AHW3Winter10

# 265AHW3Winter10 - ECE 265A Homework #3 (TA:...

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ECE 265A Homework #3 (TA: suk006@ucsd.edu) Due Tuesday Feb. 23, 2010 In-Class. No late homeworks accepted. 1) 20 pts. Linearity for NMOS devices. a. Calculate a power series that represents the long-channel NMOS device ( 2 2 no x do v C W I V L ) in saturation in a weakly nonlinear circuit. What is the IIP3 for this device? (5) b. Now consider a short-channel NMOS device ( 2 ov d sat ox ov sat V Iv C W VE L ). Draw a simple graph of the drain current vs overdrive voltage. Please note the location of inflection points and the voltage associated with the inflection points. (2) c. Calculate a power series that represents the short-channel NMOS device in a weakly nonlinear circuit. What is the IIP3 for this device? (13) 2) 30 pts. Improving Linearity in a BJT Amplifier. Your company needs an amplifier with 30dBm IIP3 and you are asked to see if this feasible. Assume that the BJT power series derived in class is valid in your situation. The input and output of your amplifier are matched to 50 Ohms.

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## This note was uploaded on 10/09/2010 for the course ECE 230 at UCSD.

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265AHW3Winter10 - ECE 265A Homework #3 (TA:...

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