Lecture_8 - K n is called the Conductance Parameter:...

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EE 310 Lecture 8 The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) The MOSFET in saturation is a voltage-controlled current source (VCCS) Starting with p-type substrate material gives us a device that uses electrons as the majority carrier. Lecture 8 Page 1
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EE 310 Lecture 8 Inducing a Conducting Channel Channel depth is proportional to v GS : Small v GS Larger v GS Lecture 8 Page 2
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EE 310 Lecture 8 MOSFET I-V Relationship in the Nonsaturation Region For v DS values near zero, the MOSFET behaves like a linear resistor: The MOSFET is strongly nonlinear in this region: Lecture 8 Page 3
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EE 310 Lecture 8 MOSFET I-V Relationship in the Saturation Region The MOSFET behaves like a voltage-controlled current source in this region: i D v GS Lecture 8 Page 4
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EE 310 Lecture 8 Characteristic Curves in All Regions Symbols The constant
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Unformatted text preview: K n is called the Conductance Parameter: Lecture 8 Page 5 EE 310 Lecture 8 Example An NMOS transistor has a conduction parameter, K n , of 250 A/V 2 and a threshold voltage, V TN of 1 volt. Find the drain current, I D , when the gate-source voltage, V GS , is 1V, 2 V, 3 V, and 4 V. Plot I D vs. V GS . V GS (V) I D (A) 1 2 3 4 I D (mA) V GS (V) Lecture 8 Page 6 EE 310 Lecture 8 p-Channel MOSFETs Nonsaturation region behavior: Saturation region behavior: Starting with n-type substrate material gives us a device that uses holes as the majority carrier. Lecture 8 Page 7 EE 310 Lecture 8 Channel Length Modulation Practical MOSFETs are not constant-current in the saturation region - they exhibit a finite output resistance effect. Lecture 8 Page 8...
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This note was uploaded on 10/12/2010 for the course E E 310 at Pennsylvania State University, University Park.

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Lecture_8 - K n is called the Conductance Parameter:...

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