Lecture_9 - Example 3.3 Lecture 9 Page 4 EE 310 Lecture 9 A...

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EE 310 Lecture 9 A Summary of MOSFET Relationships L W C K ox n n 2 1 L W k' K n n 2 1 ox n n C k' where L W C K ox p p 2 1 L W k' K p p 2 1 ox p p C k' where NMOS Conduction Parameter Definitions PMOS Conduction Parameter Definitions ) 1 ( DS v ) 1 ( SD v Table 3.1 Lecture 9 Page 1
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EE 310 Lecture 9 The MOSFET at DC Sketch a DC model of the amplifier circuit shown: Then solve for I D and V DS : Lecture 9 Page 2
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EE 310 Lecture 9 DC Analysis Procedure Zero all independent ac sources; replace capacitors with opens. 1. Assume saturation region operation ( V DS > V DS sat ) 2. Using the saturation region equation and the circuit relationships, solve for V GS . There will be two roots for a quadratic equation; so discard the incorrect root. 3. Solve for I D and then V DS . 4. Compare your answer for V DS to V DS sat ( V DS sat = V GS V TN ). If V DS > V DS sat then the device is in saturation. 5. If, however, V DS < V DS sat then the device is in the nonsaturation region. Repeat the analysis using the nonsaturation region equation. 6. Lecture 9 Page 3
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EE 310 Lecture 9
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Unformatted text preview: Example 3.3 Lecture 9 Page 4 EE 310 Lecture 9 A Graphical Visualization Technique — The Load Line A Load Line is a plot of the load, R D , on the MOSFET's i D vs. v DS curves. Step 1: Find the two endpoints of the load line: Step 2: Plot the line and plot the Q-point. 5 V Lecture 9 Page 5 EE 310 Lecture 9 Example Using Bipolar Power Supplies K n = 500 μA/V 2 , V TN = 1 V, λ = 0 V − 1 Find the MOSFET's drain current, I DQ : 1. Solve for V G : 2. Find V GS and express I D as a function of V GS : 3. Write a device equation for I D : 4. Solve 2 and 3 simultaneously for V GS : Lecture 9 Page 6 EE 310 Lecture 9 Example Using Bipolar Power Supplies (Continued) K n = 500 μA/V 2 , V TN = 1 V, λ = 0 V − 1 5. Solve for I DQ : 6. Solve for V DSQ : 7. Check the saturation region assumption: Lecture 9 Page 7...
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Lecture_9 - Example 3.3 Lecture 9 Page 4 EE 310 Lecture 9 A...

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