EE 332 Lesson 0628 - EE 332 DEVICES AND CIRCUITS II WEEK 2 06/28 BIPOLAR JUNCTION TRANSISTORS Microelectronic Circuit Design Jaeger/Blalock UW EE

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6/28/2010 1 ©UW EE TC Chen Microelectronic Circuit Design Jaeger/Blalock EE 332 DEVICES AND CIRCUITS II WEEK 2 06/28 BIPOLAR JUNCTION TRANSISTORS ©UW EE TC Chen Microelectronic Circuit Design Jaeger/Blalock BIPOLAR TRANSISTOR: PHYSICAL STRUCTURE Consists of 3 alternating layers of n - and p -type semiconductor called emitter ( E ), base ( B ) and collector ( C ). The transistor consists two pn junctions, the emitter- base junction (EBJ) and the collector-base junction (CBJ) E (N) B (P) C (N) 4
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6/28/2010 2 ©UW EE TC Chen Microelectronic Circuit Design Jaeger/Blalock BIPOLAR TRANSISTOR: PHYSICAL STRUCTURE The transistor normally is with a heavily doped emitter and a lightly doped base The base is usually very thin E (N) B (P) C (N) P nEO P nCO N pBO 5 ©UW EE TC Chen Microelectronic Circuit Design Jaeger/Blalock NPN TRANSISTOR: FORWARD CHARACTERISTICS The current flow only diffusion current components are considered; drift current are usually very small and can be neglected.
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This note was uploaded on 10/12/2010 for the course IT 23211 taught by Professor Tai during the Summer '10 term at Punjab Engineering College.

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EE 332 Lesson 0628 - EE 332 DEVICES AND CIRCUITS II WEEK 2 06/28 BIPOLAR JUNCTION TRANSISTORS Microelectronic Circuit Design Jaeger/Blalock UW EE

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