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Unformatted text preview: 17-3 v c e N = 7.0 x 10 cm , and an electron affinity (difference betw een vacuum level and E ) P = 18-3 4.07 eV, all at T = 300 K. (a) Compute the hole concentration at 300 K if the material is intrinsic. (b) Compute the electron concentration at 400 K if the material is intrinsic. (c) If the GaAs is doped w ith 10 cm donors, caclulate the electron concentration 17-3 assuming full ionization of the donors. (d) For this doped, n-type GaAs of part (c), w hat is the concentration of holes at 300 K? F (e) Determine the location of Fermi energy E for intrinsic GaAs at 300 K. 8. The variation of resistivity D of intrinsic Ge w ith temperature is given by the follow ing table: T (K) 385 455 556 714 D ( S-m) 0.028 0.0061 0.0013 0.000274...
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