Unformatted text preview: donors per cm on the collector side 18 3 and 10 acceptors per cm on the base side. Assume the dielectric permittivity of the 15 3 semiconductor to be 1 pF/cm. (a) Is the transistor an npn or a pnp device? (b) Sketch and label the charge density D , electric field E and potential V w ithin the collector-base depletion region under zero bias. (c) Calculate the peak electric field and depletion region w idth under zero bias and 10 V bi reverse bias respectively. Assume the built-in potential V = 0.8 V. (d) What is the change in effective base w idth as the collector-base voltage is changed from 0 to 10 V? Does this improve or inhibit the performance of the transistor?...
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- Trigraph, Condensed matter physics, Band gap, ef f ect, deplet ion region