B-Crystal Growth - Crystal Growth 崔 崔 崔 崔 崔 崔...

Info iconThis preview shows pages 1–9. Sign up to view the full content.

View Full Document Right Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
This is the end of the preview. Sign up to access the rest of the document.

Unformatted text preview: Crystal Growth - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 1 Crystal Growth Si crystal growth GaAs crystal growth Crystal properties Epitaxial growth techniques Crystal Growth - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 2 Process Flow From Starting Material To Polished Wafer Crystal Growth - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 3 From Sands to Si Crystals Si contained materials Metallurgical-grade : impurity~98% Electronic-grade : impurity~ppb Crystal growth - Ingots Si wafers ) ( ) ( ) ( ) ( ) ( 2 gas CO gas SiO solid Si solid SiO solid SiC + + → + ) ( ) ( ) ( 3 ) ( 2 3 300 gas H gas SiHCl gas HCl solid Si C + → + ° ) ( 3 ) ( ) ( ) ( 2 3 gas HCl solid Si gas H gas SiHCl + → + Crystal Growth - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 4 Crystal Parts Crystal Growth - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 5 Czochralski Method for Crystal Growth Neck is grown to eliminate dislocations generated by thermal shock to seed crystal when it touches the melt. The neck is only 4-6 mm thick for a modern large diameter crystal but can still support the weight of the crystal. Crystal Growth - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 6 Puller Configuration Crystal Growth - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 7 Charge Preparation & Loading Materials gathered per specification • Seed • Dopant • Poly-Si • Quartz Crucible • Graphite Charge Placed in Puller Crystal Growth - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 8 Melting/Stabilization Polysilicon is melted. Melt temperature brought to thermal equilibrium for crystal growth....
View Full Document

This note was uploaded on 10/18/2010 for the course EECS 216 taught by Professor Davewinn during the Spring '10 term at 카이스트, 한국과학기술원.

Page1 / 36

B-Crystal Growth - Crystal Growth 崔 崔 崔 崔 崔 崔...

This preview shows document pages 1 - 9. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online