C-Thermal Oxidation - National Chiao-Tung University...

Info iconThis preview shows pages 1–7. Sign up to view the full content.

View Full Document Right Arrow Icon
Oxidation - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Institute of electronics 1 Thermal Oxidation Oxidation method wet oxidation dry oxidation rapid thermal oxidation high pressure oxidation plasma enhanced oxidation Oxide hardness technology post oxidation anneal nitrogen passivation N 2 O or NO oxidation, N 2 O or NO anneal, nitrogen implantation fluorine passivation HF dip, VHF clean, NF 3 additive, fluorine implantation
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Oxidation - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Institute of electronics 2 Atomic Structures SiO 2 Density=2.26(2.4) g/cm 3
Background image of page 2
Oxidation - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Institute of electronics 3 Thermal Oxidation Dry Oxidation Si (s) + O 2 (g) → SiO 2 (s) Wet Oxidation 2H 2 (g) + O 2 (g) →H 2 O (g) Si (s) + H 2 O (g) →SiO 2 (s) +2H 2 (g) 0.44d Si to 1d SiO 2
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Oxidation - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Institute of electronics 4 Deal-Grove Model-1 Oxidants must be transported from the bulk of the gas to the oxide surface. C g : oxidant concentration in bulk of gas C s : oxidant concentration right next to the oxide surface h g : gas phase mass-transfer coefficient Henry’s law In equilibrium, the concentration of a species within a solid is proportional to the partial pressure of that species in the surrounding gas. C=Hp , where H is the Henry’s law constant and p is the gas pressure C* = H p g (equilibrium concentration in bulk SiO 2 ) C o = H p s (equilibrium concentration at bulk gas/SiO 2 interface) ) ( 1 s g g C C h F - = HkT h h C C h F p/kT C g o / where , ) ( gas ideal For * 1 = - = =
Background image of page 4
Oxidation - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Institute of electronics 5 Deal-Grove Model-2 Oxidants must diffuse across the oxide layer already present. D is the diffusivity of oxidant in bulk oxide C i is the oxidant concentration in bulk oxide at the oxide/silicon interface x o is the thickness of oxide layer already present Oxidants must react at the oxide/silicon interface k s is the chemical surface-reaction rate constant o i o x C C D F - = 2 i s C k F = 3 C g O 2 F 1 SiO 2 Si C 0 C i O 2 F 2 C* F 3 O 2 +Si SiO 2 X 0 O 2 Concentration Gas phase
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Oxidation - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Institute of electronics
Background image of page 6
Image of page 7
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 10/18/2010 for the course EECS 216 taught by Professor Davewinn during the Spring '10 term at 카이스트, 한국과학기술원.

Page1 / 43

C-Thermal Oxidation - National Chiao-Tung University...

This preview shows document pages 1 - 7. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online