E-Impurity Doping - National Chiao-Tung University...

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Impurity Doping - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 1 Main Diffusion Processes Doping method solid diffusion source - BN liquid diffusion source - POCl 3 gas diffusion source - PH 3 , B 2 H 6 , AsH 3 ion implantation high energy, low energy, high dose, medium dose plasma immersion Diffusion method furnace anneal oxidation rapid thermal anneal
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Impurity Doping - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 2 Dopants for Si and GaAs
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Impurity Doping - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 3 Atomic Motion
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Impurity Doping - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 4 Diffusion Equations = - = - = x C D x x F t C x C D F 2 2 x C D t C = - = kT E D D a exp 0 Fick’s 1 st law Fick’s 2 nd law Fick’s Diffusion equation
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Impurity Doping - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 5 Diffusion Profile Constant surface concentration 0 ) , ( ) , 0 ( condition Boundary ) 0 , ( 0) (at t condition Initial = = = t C Cs t C x C DT x s t x s e Dt C dx dC Dt x erfc C t x C 4 , 2 2 ) , ( - - = = π
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Impurity Doping - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 6 Diffusion Profile Constant total dopant 0 ) , ( ) , ( condition Boundary ) 0 , ( 0) (at t condition Initial 0 = = = t C S dx t x C x C ) , ( 2 ) ( 2 ) ( 4 exp ) , ( 4 2 3 , 2 2 t x C Dt x e Dt xS dx dC Dt S t C Dt x Dt S t x C DT x t x s - = - = = - = - π π π
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Impurity Doping - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 7 Successive Diffusion Steps Thermal budget Dt product determines the diffusion profile. It is used to present thermal budget. Constant temperature Different temperature ( 29 ( 29 ... ... 2 1 1 2 1 1 1 + + = + + = t t D t D t D Dt eff ( 29 + = + = + = 1 2 2 1 1 1 2 2 1 1 1 2 2 1 1 D D t t D D D t D t D t D t D Dt eff
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Impurity Doping - 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 崔 National Chiao-Tung University Department of Electronics Engineering & Institute of electronics 8
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