期末報告樣本-EUV

期&ae - Extreme Ultraviolet Lithography [email protected]"~ a a s I K I p X D D I ` D"` p D DD IK I D I ` 6 a ~ 6" DUV" 100 nm

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Unformatted text preview: Extreme Ultraviolet Lithography 6 * @6 +"~ * a a s I K+ I p X D D I ` D +"` p D DD IK I + D I ` 6 + a @ ~ 6 * " @ DUV) " 100 nm 100 +"` nm 6 * NGLP X193 nm ( 0.13m J + D (KrF) 6 * ArF) Intel @ 2007 + nm K 45 J D Moore's Law +"` (extreme ultraviolet lithography, EUVL) 70 nm (deep ultraviolet, 248 +"` nm 157 nm ( F2)` +" (next generation lithography, NGL) 6 * (ion beam projection lithography) EUVL + " ` (electron beam projection lithography) + " ` (resolution enhanced technology, RET) j( (phase shift mask, PSM) 6 proximity correction, OPC) 8 j (off-axis illumination) P EUV P EUV (optical P v + ` " (source) + ` " EUVL Railey Equations 6 EUVL * j (multilayer thin-film coating)~ @a s 6" + * a EUVL +" ` EUVL EUV (R) (depth of focus, DOF) R = k1 NA NA 2 NA RET DOF NA<0.2 1-40 nm +"` <140 nm DOF = k 2 NA n sin @6 " a~ * + s ( 6 6 numerical aperture~ @6 " a * + a s @6 "aa * + DOF~ s PSM modified illumination OPC) ~ @+ a 6* " R<0.1 m DOF>1.0 m EUVL 6 X 13.4 nm* 6 (soft x-ray) Fig. 1 * 6 (extreme uv) Fig. 1 R DOF*~ 6 EUVL + " ` DOF +" ` 6 ~ 100 nm 6 * ~ (13 nm)@* a + s (feature) ~6 1 m EUV (laser produced plasma, LPP) (conversion efficiency, CE) 1-2% LPP * ~ 6 13-14 nm 6 * ~ (pulsed laser)~* 6 (ionized) * 6 * 6 Aluminum Garnet) (debris) +"` 6 * @ +a ~ 6 " * s * 6 EUV 1000* 6 1064 nm 6 * laser x pumping EUV (Nd:YAG, Neodymium: Yttrium 1700 6 * CE 2% (high-density xenon gas-jet target) Xe Xe6 * ( Fig. 2) 6 (peak intensity) 13.5 nm 10.8 nm LPP EUV Fig. 6 2 H EUVL@ p + * D K @ " a a s @ * 6 ` + ~ u K @ D J + 0 H p + & D K @ (Fig. 3)H* 6 (Fig. 4)~ + a s @ * 6 ` " 13.4 nma +~ "` a s @ * 6 Be RuH ) 70% EUV6 H (Mo) EUVa " ~ @ * 6 ` + (coat) H 6 * EUV Bragg Fig. 3 Mo-Si 8 6 Fig. 4+t ` (magnetron @ + "a sputter)~ s 6 a * + J D y@ K (wavefrontD @ error) 7 K @ coating uniform coating~ @* +a 6 " (throughput) I graded +@ @ EUVL @ K D + D K p Fig. 5 M1 M2 M4*( 6 M3 (` k 6u 1 nm( 6 ( surface errors( 6 * ) wavefront error (rms) I 0.25 nm @ wavelength (roughness) spatial mid-spatial frequency roughness (MSFR) 1 m high-spatial frequency roughness (HSFR)~ * 6 Fig. 5 EUVL ~ * 6 step-and-san +"` reduction factor ( 10 ) xh 6 * X6h * x EUVL + " ` p+ K ` I D [ 6 +" a * ~ * +" a 6 )~ I pD+ D K I I ` D ( EUV (h 6 ) Fig. 6 EUVL paper AT&T Bell Laboratories h 6 (defect-free deposition technology)h 6 Fig. 6 EUVL ( 6 EUV " ` + ultra-thin resists (UTR)Ȫ 6 * exposure linearity 1mȦ 6 * NA * 6 Phase-shifting diffraction interferometer (PSDI)H 1997 i @ JD+PSDI atomic force microscope (AFM) 6 0.25 nm HSFR Fig. 7 Fig. 7 PSDI x * 6 Sandia National Laboratories Lawrence Livermore Laboratory Lawrence Berkeley Laboratory( * 6 ( tool engineering test stand, ETS)( 6 * (projection optics) Fig. 8 alpha-class EUV tool * ( 6 LPP EUV* ( 6 (precision scanning (condenser optics)( 6 stages) ( 6 (vacuum enclosure)( * 6 Fig. 8 ETS X * 6 EUVL + " ` critical dimensions (CD) (linearity) 5% Fig. 11 6 ETS 6* 50 nm 130 nm g Fig. 10 6 Fig. 9 6 EUVL 2 m 6 * EUVL Fig. 9 2 10x EUVL X 6 Fig. 10 EUVL 2 linearity 2 Fig. 11 EUVL EUVL F ( X 6 * *X 6 EUVL (2) i (6)` +" p 193 nm generation ( (1) " s @ * 6 + a ~ (3) i G throughput (4) X 6 * EUVLa + " ~ a s @ * 6 (cost of ownership) EUVL (5) ETS EUVL@ pK + * D K @ k x X + s *a @ 45a +"~ s @ * 6 i @ I ` I D K p + = 7 D K @ EUVL 7 D @ paper @ 7 D K 10 paper + @ D J X6 H Intel (H 6 * 2007 +"` )H 6 * C. W. Gwyn, R. H. Stulen, D. W. Sweeney, and D. T. Attwood, "Extreme Ultraviolet Lithography," Journal of Vacuum Science and Technology. B, vol. 16, pp.31423149, November 1998. Don Sweeney, "Extreme Ultraviolet Lithography--Imaging the Future," Science &Technology Review magazine, November 1999. G. Dan Hutcheson, "Extreme Ultraviolet Lithography Will It Be Ready in Time " IEEE Spectrum, November 2001. Gary Sommargren, "New Interferometer Measures to Atomic Dimensions," Science & Technology Review Magazine, October 1997. Harry Shields, Steven W. Fornaca, Michael B. Petach, Rocco A. Orsini, Richard H. Moyer, and Randall J. St. Pierre, "Laser-Produced Plasma Light Source for Extreme Ultraviolet Lithography (Invited Paper)," Proceedings of the IEEE, vol. 90, no. 10, October 2002. John E. Bjorkholm, "EUV--The Successor to Optical Lithography?",Intel Technology Journal, Q3'1998. Regina Soufli, "In the Chips for the Coming Decade,"Science & Technology Review Magazine, October 2003. Richard H. Stulen, "13-nm Extreme Ultraviolet Lithography,",IEEE Journal of Selected Topics in Quantum Electronics, vol. 1, no. 3, September 1995. Richard H. Stulen and Donald W. Sweeney, "Extreme Ultraviolet Lithography (Invited Paper),",IEEE Journal of Quantum Electronics, vol. 35, no. 5, May 1999. Sasa Bajt, Jennifer B. Alameda, Troy W. Barbee Jr., W. Miles Clift, James A. Folta, Ben Kaufmann and Eberhard A. Spiller, "Improved reflectance and stability of Mo-Si multilayers,"SPIE, pp.1797-1804, August 2002. S.P. Vernon, P. A. Kearney, W. Tong, S. Prisbrey, C. Larson, C. E. Moore, F. Weber, G. Cardinale, P-Y. Yan, and S. Hector, "Masks for Extreme Ultraviolet Lithography (Preprint)," September 1, 1998. Stephen Vernon, "Compact, More Powerful Chips from Virtually Defect-Free, ThinFilm System," Science & Technology Review Magazine, October 1997. http://stdb.org/pnn/default.asp?news_id=1310 http://140.114.18.41/micro/chap6/chap6-2.htm#6-2-4 http://www.eettaiwan.com/ART_8800373111_480202__no.HTM http://www.eettaiwan.com/ART_8800400839_480302_ad0decb4_no.HTM http://belgium.nsc.gov.tw/NEWSLETTER/policy/P-0411/P-0411002.htm http://www-pat.llnl.gov/Research/IST/euvl.html http://oemagazine.com/fromTheMagazine/feb03/euv.html ...
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This note was uploaded on 10/18/2010 for the course EECS 216 taught by Professor Davewinn during the Spring '10 term at 카이스트, 한국과학기술원.

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