CH 4 - Chapter 4 Field-Effect Transistors EE4313 Electronic...

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Chapter 4 Field-Effect Transistors Chap 4-1 EE4313 Electronic Circuits II
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Chapter Goals Describe operation of MOSFETs. Define FET characteristics in operation regions of cutoff, triode and saturation. Develop mathematical models for i-v characteristics of MOSFETs. Introduce graphical representations for output and transfer characteristic descriptions of electron devices. Define and contrast characteristics of enhancement-mode and depletion-mode FETs Chap 4-2 FETs. Define symbols to represent FETs in circuit schematics. Investigate circuits that bias transistors into different operating regions. Learn basic structure and mask layout for MOS transistors and circuits. Explore MOS device scaling Contrast 3 and 4 terminal device behavior. Describe sources of capacitance in MOSFETs. Explore FET modeling in SPICE.
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MOS Capacitor Structure • First electrode- Gate : Consists of low-resistivity material such as metal or polycrystalline silicon • Second electrode- Substrate Chap 4-3 or Body : n - or p -type semiconductor • Dielectric-Silicon dioxide: stable high-quality electrical insulator between gate and substrate.
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Substrate Conditions for Different Biases Accumulation Depletion Chap 4-4 Accumulation V G <<V TN Depletion V G <V TN Inversion V G >V TN Inversion
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Capacitor on P-type Substrate • MOS capacitance is non- linear function of voltage. • Total capacitance in any region dictated by the Chap 4-5 separation between capacitor plates. • Total capacitance modeled as
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This note was uploaded on 10/27/2010 for the course EE Electronic taught by Professor Ortiz during the Spring '10 term at The University of Texas at San Antonio- San Antonio.

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CH 4 - Chapter 4 Field-Effect Transistors EE4313 Electronic...

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