CH 3 Part 2 Pages 20 to 40_1

CH 3 Part 2 Pages 20 to 40_1 - 3.21 H05FET DC (Judd:...

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Unformatted text preview: 3.21 H05FET DC (Judd: fimaégf; [73155167 7% H05 #:2973554?) 3.5M E VG=V&5: VDD R‘ + 7539 V65 >V'TA/ (I'M! £10 7% *mazsjor {:5 aim Sd'lfif‘cflllo';\ (mod? ck)”: 2. In" M! 0/65“ Vw) V03: 09"1}; ED EM 1; 61M R]:aOkJL Rfiwksu, RD‘WKJL VDD=5v VT”: {JV KMWQI MAL FM; It) é 1/05 3? ngme’n— SDKPY‘CQ CWCUJ: cm! I 99/7: .' VIZV :5 e 6' 65 V 30k+2e9t 30:06, assume, 77ml 7% 2(9); - 2v law/$24 F ls. aim 71$ smlufa'Llé'w 1'9 law-b LL19 CW4 059, #9 5m!» Wino-m @fuwlww ID: (aim/v2)(a,-I)Z= 0.1M "_ VDS=5" 2&9]: 1' CK guldwlfim: V95 3v am >’ 3v - '- Tm salivarer @K / 921 7b C‘WCle-L 'HJ )ces‘é W159, 6,1995 4702.1: c956. 0L sexfi‘fie i‘QSmér / S. In arc‘fi‘ "E mirwue. 'Hq Lids Femit SAIL/r 0266?}:155 0’9va Varialzamfl 0» P8551191” P5 1.5.. QACLQJ 74g 5915er 925MB" Bias slubliify Dblolnad by Including reslslance R’s. Devices 1 and 2 repxesenr two extremes among units 0! the same type. 5““ Inn Pf 09% (“V/0 R93)“, 7i? Vellge VGe=Vss (3 1(3wa gvboj if? 531532. Nola c‘tmemma {m In, fl 3353‘ v'u Fgfi i. 9f“ IT} 7%: C6359, #074 (.5 051%!) VGG— :Is‘ E‘s"? V615 =IDR3+ V615 (9i? ‘ " v93. I ‘" ID": Rs "’ Rs a: in 4- 'm x [EDIE 7%:114 saving CJQVIEQ Vawcz'vzmwg, 1i), h; 0396 ammo/5 c/osnfww_ . 1» ‘ WEEEL/g’ 601:) V5 J J D fifififl.? —v| R5; R9” k” :0“; w%2 I:le a” CU?W?77£.S E' 120/:ch 9;? VTN=Vé =IV VDDEM" will 1*] l /67 fiD=Gk glmga VG: / {mfiiff 50%. ('9? IL“: 05/1? ? m}: kw»: “MALL. VS a I!) ES- l’l V619 '2' 5‘" 6k ID ID: ir(vG_S--Vé,)2= ang—éro ~02 ID; a? It? “25*.1},+§=—c> gr " Dzzagwfl Fm- $9,261.??MJ Us; Qakxaz’vmysaqv 7V6? N0 swap Lib-r Epzig-anA‘J V5=(5f()C&fiH/Fj 3-- 3V .3 V65: gag; av Cf} 05(34):: 0,5,,” VD=Ja~ (am/4%,; {EL __ M, V05- ‘ if W V95=VD~V5—¥‘3~ 4U ‘~ Véswvé - 3h! $07!. 1/ A? / “‘ g 1/ z “Hi: ‘6 RES “‘ km (VGVVTLD 6" @VMMMM 81/ Z E‘VG-s “C6k3?)(& 5' W43) (V55 '" O 5‘Vcs~s~ 3(V5.52*9~U&4%1> :— 3V6~sz~évgmg +3, '2. gvfi “51/5; "01:0 EEJW a +5tJa-S+9LI _:§iq +3“. :1 “fl”— "‘ “I H _I am- Bfimszg‘ USE? Dam/in 7g Gag-é: Egg/gm”! tamarer (@0001, O'h’ 1091‘ En Aamcémymé QJFQflSIsL¢$> Anclhar popular and simp!e biasing arrangement for enhancement MOS discrete-circuit amplifiers. Bias siabfilly 35 pzovlded by the drum—toggle reedback resistor R3. Since VD = us, his blasfing c schame Is no? directly suitable for depielien- I ‘ Wpe devices lncEucllng JFETs.‘ v D v 3 > 0 GE" T i” Locus of points for which V05 '* V09 * RD ID “as = “as _ V} Locus of runs = "6.5 VDD J V “W H' F".— 13.5 D RD 5’0 Evaluullon or Ihe dc opamnng point 9 f It: VJCVJVDWEDPDL VJJ Vast 3:04? 63%: 57% RD 71:7: magi/:41 ID: I'M. 19L" anflvg Vé-.:c31:’ f1": QQSM/Va ID=RCVGS~VCJZ .'.VD:‘£/\J =. “Eva—a?“ 90—!- W (9 23%( 6 3 R52”? / 2/6/6521. 2}: VGS—Q, ‘Wfl’ w V6~5=4§l3V55 013'— 50W Rewdi‘Lé QT“ 01m QWLleQTtCGWW'ZZ'WQCé’ C/ewcla. If I; fasirgé 7g Six/9H5 7%? o’f‘Qfiw—flaé (9pm emAm’Jceqn pm! w wocla a/Pw'ce 53: )i win am, «mafia raking chi-7977043 gm 7%; Vbs Mime; LOFFJ 'zp Vasrvsts < Vi: a. SBTUWWW; "r10 Vns= Vas > V7:- ( . V95 51“ Le. VGg‘Vf WWWJQWQ x} film? can Ag f/m‘g Mgm ié 66,15 E GIN?! SOME.) \thcg V9530 9’ 7% o/eere CW (Drank, M am (ON; 910 7% S warms. c/Pré’mc’lc'aj am, 7% #Twwswséf“ Pammki‘g % VDD. SR'TURIP‘TIOM all! NBND Guie gaf- E.-.‘}ia.iza:: pa?afi@£wf$ e3”? Cfifla‘: mwiém m Svfefié‘ifi 5% Hmmg @‘Q fififflfio Hwazéffl. gs Wma m 6mm -. . I; Ewmsa rm PTQCE’SS uremia/flak . E, Emavasa fin awm. PM camafig’u Gate. Source g— l q - . A. ‘ .- i . 1,. n—type body 1 511m i i'num “mm-1 horizontal scale scale (a) Cross-sectionaE View +VDD 91 Output m u ((9) Alternative schematic sysmbois CMOS transistor; PMQE Vwi HNOS Vy‘n: VIN =VDD (VMOS ON cemJanL-a Jamie!) PHOS OFF (V6.5=0) IDP=IDN= /ealrcge cuwen'n'é 013% PHOS Jame. +VDD I40 (“Page V0: VOL = 0v 4 i; o IVNDs P1905 w? 0N IDP=IDN=IPQ age, cmewi‘ I40 01; 7%, WHO: Jevfce Him; I We V0 Svog : 1(00 f‘N—i’w 9'1?- IDA;[Mm—WW— wan-m? gr V0 ;» (vi-M791) 3.6 (St—FET " JGmCJIém Held-Email 734921554? D r Per/gist s adar’déh, 7% SIGN/919514 7Lm’ttsr5t/éi" " 7-6. PM Jamalwln 1:5 ’Yteuai” anuarei $155 CJll‘Pclme’l . , Smog, 7% PNJdmcjlm-iq r3 MWMVX 1195905, PM; If; “9&7 4&3 (/0048 “1‘16 figwé) Some 14/1541‘ ; H,//ma97 GHQ/Am: /?6% D splat-ion re gion Fig. 14-] sister. The basic structure of an n-charinel field-effect tran- The normal polarities of the druin-to-source and gate—to— source supply voltages are shown. In up-chcnnei FET the voit— .ages would be reversed. Fig. 14-2 ' Circuit symbol for an nachonnei FET. : FET the arrow cit the gate junc- (For a p-channel tien points in the opposite direc- tion.) For an n-channe] FET, ID and V93 are positive and Vgg is For (i p-chunnel FET, In and I’m—are negative and Vgs is negative. positive. 01‘? (a) (b) (c) FiElure 3.59 Gate-tohchalmel space—charge regions and currentevoltage characteristics for Small drain-to-source voltages and for: (a) zero gate voltage, (13} small reverse—biased gate voltage, and (c) a gate voltage that achieves pinchoff ,r.______.—_. ’ l Saturation 1“— - I reglon I 1.505 (sat) DDS (a) ('3) (¢) Figure 3.60 Gate-to~channel space-charge regions and current—voltage characteristics for zero gate voltage and for: (a) a small drain voltage, (13) a larger drain voltage, and (c) a drain voltage that achieves pinchoff at the drain terminal IDSS ID -— —- “cs 5 VP (3) (b) Figure 3.64 Currentmvoitage characteristics for: (a) n-chalmcl JFET and (b) p-channel JZFET 19 D l + 6' + Vos VG-S -' 1; “cs 2 VP I01 34771 UOa'llm-Ly) C mall” (1971f (VF I " i0 V03}??? V30) (b) Figure 3.65 Drain current ver5us gate-to-source voltage characteristics for the transistor biased in the saturation region (a) 11Achanne11FET and (b) p—channel J'FET Ivss Burma B‘FET 0V” CgameO Far :1, “CAQ’TMP/ JFET 7’60me fvofer‘éb ‘Vf< V635 \< 0v 6)?) v65. Wad Le 0L mfiql-ak Viv/11269. AWN in“ 7zéf’m1cé,“ ma} Uni/Egg luff Ufa 7:? 0v, VDD 712 filmyéé-g w 7; Alas a JFET is down. vim F76 , méaje I; plum], Veno . (11% (Du LUNG 7% QDU‘FL’Q, is me a. Ff 1 Vs . =€= 1 Rs PQSFI‘IUE value, (V5: ID Rs?) "Melba Ia V6.5 CL wamhlxe Valua. :- T ' V620 V =—I i? Vsiapsg 65 b 5 7E Gift—11¢ Van F65 1 7101; Watch] Q? cam/VJ: IQCC? 15:71,, VDD %' {s clamor”r v'm F6 (9, Q - : 9‘} CC' Ej , Ccz 0; Tb [WPL/f scum; ('5 SAM-zeal 7156(va ? f1.) %Lfis 7:) 19A PWL/Wj a. C3.51442 b25194“ PG. . O 1):; +VD9 :5 CECUQJ (6115 54mm, Vin Ff 5), V .R 9 C7 ' v / Cc \\ D W mag IGEOJ [/Rgzov g 6%: Ovo -' (z c (93" awe A? “:35, p7? (d‘e‘l at) 1}; PG I R5 Agmfimmg 1... Viahélv I955=A$5¢M9 ©9594! 99"" EDflé‘P-g’hafi. 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Problem 5.26 is used to illustrate a simple way to modify the MOS parameters. The problem states that: Vm=l.2V and Kn=05mAN2 Imgortant note on SPICE‘S KP: Spice’s parameter KP is our pnCuxn This means that for the above circuit Kn=O.SmA/VZ = '/2 oncogwm) To make Kn=0l5mAfV2 one can select (WILFZ and enter in SPICE KP= 0.5mAIVz. The same result can be obtained if (W/L)=1 but in SPICE enter KI"=1mAJ’V2 . Draw the circuit and enter values for W & L. (I selected W=4u and L=2u) 2, In order to enter the MOS parameters, highlight the MOS, and click on: EDIT 85 select model. The following Edit Model window will come: Select from the above the middle button: “Edit Instance Model (Text)”, and the following Model Editor will come up: In this editor you enter the MOS parameters. Enter VTO=L2V Sc KP=0.5m in the model as shown: FYI: a MOS (FRF 1504K) from the library with the parameters (partial list) 4/0 ...
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This note was uploaded on 10/28/2010 for the course EEN 305 taught by Professor Lask during the Spring '10 term at University of Miami.

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CH 3 Part 2 Pages 20 to 40_1 - 3.21 H05FET DC (Judd:...

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