hw2.ee245.f09.v4

# hw2.ee245.f09.v4 - EE C245 ME C218 INTRODUCTION TO MEMS...

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EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 - 1 - PROBLEM SET #2 Issued: Tuesday, Sept.15, 2009 Due (at 7 p.m.): Thursday, Sept. 24, 2009 , in the EE C245 HW box in 240 Cory. 1. The cross-section below is to be etched via reactive ion etching (RIE). For this problem, as- sume that the RIE etch is 100% anisotropic and that it etches polysilicon at the rate of 1 μ m/min and has a silicon-to-oxide selectivity of 5:1 as well as a silicon-to-photoresist selec- tivity of 2:1. Draw cross-sections of the structure after etching for (a) 2 min.; (b) 5 min.; and (c) 6 min. Figure 1 2. The linear coefficient of thermal expansion of the glass used for a photolithography mask is given by the expression ܶܥ ி 1 ܮ ߲ܮ ߲ܶ ∆ܮ ܮ 1 ∆ܶ where L is a length on the mask and T is temperature. Let TC F =3 ppm/ o C for a given mask. Suppose that an alignment accuracy of 0.5 μ m across a 6-inch silicon substrate is required from one layer to the next. Assume the thermal expansion of silicon is negligible in comparison and

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hw2.ee245.f09.v4 - EE C245 ME C218 INTRODUCTION TO MEMS...

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