hw3.ee245.f09.soln.v2

# hw3.ee245.f09.soln.v2 - EE C245 ME C218 INTRODUCTION TO...

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EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 - 1 - PROBLEM SET #3 Solution (a) Draw the cross-section of the structures along the A-A’, B-B’, and C-C’ lines in the layout: (i) after step 14.2 of the process; and (ii) at the end of the process. Here, you should get the thickness di- mensions correct (to within 100 nm or 20%, whichever is finer). Draw the length (horizontal) dimensions using a compressed scale. If any structures completely detach from the wafer, please show this clearly in the final sketch. This solution is based on the latest process flow TA updated. In other words, the hard mask oxide was removed in step14.6. Some processes are included, and they are just for your reference. After 6.2, the nitride thickness: 300 300 0.3 2 120 nm −× × = After 10.2, the Poly1 thickness in the anchor: 300 200 0.3 0.25 285 nm ×× = A-A’ Silicon PSG1 Nitride PR After 6.2 Poly1 2 μ m 710nm 300nm 120nm 300nm A-A’ Silicon PSG1 Nitride PR After 10.2 Poly1 2 μ m PSG2 120nm 200nm 285nm 1.1 μ m 300nm A-A’ Silicon PSG1 Nitride PR After 14.2 Poly1 2 μ m PSG2 120nm 200nm Poly2 2 μ m 285nm oxide 500nm 300nm 1.6 μ m A-A’ Silicon PSG1 Nitride PR After 17.5 Poly1 2 μ m PSG2 120nm 200nm Poly2 2 μ m oxide 300nm 285nm Ni 200nm

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EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 - 2 - Calculate the time for etching Ni seed layer: The etching time must be calculated from the layout, to guarantee the widest Ni seed layer of the structure is etched. The close ­ up view shows the part of the structure that requires the longest etching in the right plot. Assume the vertical direction is etched by x μ m: () 2 2 10 50 26 μ m xx x =+ = The PSG2 thickness: 1 200nm 26 μ m0 . 3 1 7 4 n m 300 −× × = The gap between the Au and PSG2: 11 40nm 26 μ . 3 2 6 μ . 3 8 2 n m 300 500 × × Au layer A-A’ Silicon PSG1 Nitride PR After 21.1 Poly1 2 μ m PSG2 120nm 200nm Poly2 2 μ m oxide 300nm 285nm 200nm Ni 40nm A-A’ Silicon PSG1 Nitride PR Poly1 2 μ m PSG2 120nm 200nm Poly2 2 μ m oxide 300nm 285nm 174nm Ni 82nm Au 2.416 μ m After 21.4 SP1 (cf) SNC (df) SG1 (df) SG2 (df) SA1 (df) 40 μ 60 μ 8 μ 80 μ 20 μ 10 μ 20 μ 20 μ 16 μ A A’ B B’ C C’ 5 μ 16 μ 50 μ 50 μ 80 μ 24 μ 8 μ 80 μ 15 μ 50 μ 24 μ 50 μ 20 μ
EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 - 3 - The Au layer thickness: 11 2.5 μ m2 6 μ m1 . 3 2 6 μ m0 . 3 2 . 4 1 6 μ m 500 500 −× × × =

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hw3.ee245.f09.soln.v2 - EE C245 ME C218 INTRODUCTION TO...

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