hw6.ee245.f09.v7 - EE C245 / ME C218 INTRODUCTION TO MEMS...

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Unformatted text preview: EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 PROBLEM SET #6 Issued: Thursday, Nov. 5, 2009 Due (at 7 p.m.): Tuesday, Nov. 24, 2009 , in the EE C245 HW box in 240 Cory. 1. Suppose you would like to fabricate the folded-beam suspended comb-driven structure described by the figures and process flow in the pages that follow. The structure is constructed entirely of doped polysilicon, i.e., the yellow and gray layers are both doped polysilicon, and this particular device features a shuttle mass held 2 m above the substrate by a ratioed folded-beam suspension. Dimensions for the structure are given, except for ones that you will need to determine as part of this assignment. The structure itself (in green) is meant to be 2 m-thick, and the interconnect layers beneath (in yellow) are meant to be in a thin doped polysilicon layer. (a) Assuming that beam L 2 is 20 m longer than beam L 1 , determine the lengths of these beams so that the shuttle displaces 1 m upon application of 50V to the shuttle (through its underlying ground plane) and 30V to the left electrode, with the right electrode grounded. (b) For the rest of this problem, assume that L 1 = 80 m and L 2 = 100 m. (Note that these are not necessarily the correct answer to part (a).) Use Cadence to generate a layout that achieves the structure of Figs. 1-4 using the process flow outlined in the pages that follow. In addition, add a contact to the substrate ground plane with sufficient area to allow bond wiring to this contact. Also, add interconnect and a bond pad that allows the structure to be biased to a specific voltage during testing. Make sure the spacing for the bond pads are sufficient to allow wire bonding. [Maybe not all masks from the process flow need to be used in this part.] (c) Calculate the effective dynamic mass on a shuttle location when the structure vibrates at its fun- damental resonance frequency. (d) Calculate the structures resonance frequency. EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 Fig. 1 Fig. 2 80 m 80 m 50 m 10 m 16 m 6 m 150 m 25 m 6 m 6 m 25 m 25 m 20 m L 2 83 m 4 m 8 m 70 m L 1 80 m 10 m 8 m 40 m 1.5 m 173 m 8 m DC voltage V p AC voltage v 1 AC voltage v 2 EE C245 / ME C218 INTRODUCTION TO MEMS DESIGN FALL 2009 Fig. 3 Fig. 4 5 m 1 m 30 m 20 m 10 m 5 m 2 m 2 m 2 m 8 m 300 nm 2 m 5 m 2 m 8 m EE C245 / ME C218...
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This note was uploaded on 10/30/2010 for the course C 218 taught by Professor Clarknguyen during the Fall '09 term at University of California, Berkeley.

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hw6.ee245.f09.v7 - EE C245 / ME C218 INTRODUCTION TO MEMS...

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