Lec6p2.ProcessModulesII - EE 245: Introduction to MEMS...

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EE 245: Introduction to MEMS Lecture 6: Process Modules II CTN 9/15/09 Copyright © 2009 Regents of the University of California EE C245 : Introduction to MEMS Design LecM 4 C. Nguyen 8/20/09 1 EE C245 – ME C218 Introduction to MEMS Design Fall 2009 Prof. Clark T.-C. Nguyen University of California at Berkeley Berkeley, CA 94720 Lecture Module 4 EE C245 : Introduction to MEMS Design LecM 4 C. Nguyen 8/20/09 2 Lecture Outline Reading: Senturia, Chpt. 3; Jaeger, Chpt. 2, 4, 5 ª Lithography ª Etching ( Wet etching ( Dry etching ª Semiconductor Doping ( Ion implantation ( Diffusion EE C245 : Introduction to MEMS Design LecM 4 C. Nguyen 8/20/09 3 Lithography EE C245 : Introduction to MEMS Design LecM 4 C. Nguyen 8/20/09 4 Lithography Lithography ª Method for massive patterning of features on a wafer pattern billions of devices in just a few steps I. Radiation Source Four Main Components (that affect resolution) II. Mask III. Photoresist Mask (glass/quartz) Photoresist (~1 μ m-thick) Film to be patterned (e.g., poly-Si) Designated pattern (clear or dark field) IV. Exposure System contact, step and repeat optics this is where the real art is! emulsion chrome ª Generated from layout
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EE 245: Introduction to MEMS Lecture 6: Process Modules II CTN 9/15/09 Copyright © 2009 Regents of the University of California EE C245 : Introduction to MEMS Design LecM 4 C. Nguyen 8/20/09 5 Lithography (cont.) The basic Process – (Positive Resist Example) PR light Si Si Film Film Si Film PR PR Remove PR Etch PR protects film; open areas of film get etched Dip or spray wafer with developer if (+) resist, developer is often a base Exposed PR converts to another form after reaction with light (e.g., (+)-resist: polymer organic acid) EE C245 : Introduction to MEMS Design LecM 4 C. Nguyen 8/20/09 6 Lithography (cont.) With each masking step usually comes a film deposition, implantation and/or etch. Thus, the complexity of a process is often measured by # masks required. NMOS: 4-6 masks Bipolar: 8-15 masks BICMOS: ~20 masks CMOS: 8-28 masks Comb-Drive Resonator: 3 masks GHz Disk: 4 masks Now, take a closer look at the 4 components: Multi-level metallization EE C245 : Introduction to MEMS Design LecM 4 C. Nguyen 8/20/09 7 I. Radiation Source I. Radiation Source ª Several types: optical, (visible, UV, deep UV light), e-beam, X-ray, ion beam The shorter the wavelength Better the resolution Today’s prime choice due to cost and throughput. Can expose billions
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This note was uploaded on 10/30/2010 for the course C 218 taught by Professor Clarknguyen during the Fall '09 term at University of California, Berkeley.

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Lec6p2.ProcessModulesII - EE 245: Introduction to MEMS...

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