SUMMiT_V_Dmanual_V1.3_MASTER_external

SUMMiT_V_Dmanual_V1.3_MASTER_external - SUMMiT V Five Level...

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1 Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under contract DE-AC04-94AL85000. SUMMiT V Five Level Surface Micromachining Technology Design Manual Version 1.3 – 09/22/2005 MEMS Devices and Reliability Physics Department Microelectronics Development Laboratory Sandia National Laboratories PO Box 5800, Albuquerque, NM 87185 Before starting SUMMiT V Design, Contact Department 1769, or email: [email protected] to ensure you have the latest release of the Design Manual. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under contract DE-AC04-94AL85000
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Version: 1.3 08/26/05 2 I: Overview and Technology Description SUMMiT V (S andia U ltra-planar M ulti-level M EMS T echnology V) is a 1.0 micron, 5-level, surface micromachining (SMM) technology featuring four mechanical layers of polysilicon fabricated above a thin highly doped polysilicon electrical interconnect and ground plane layer. Sacrificial oxide is sandwiched between each polysilicon level. The thin sacrificial film defines the amount of mechanical play in gear hubs and hinges. The oxide directly beneath the upper two levels of mechanical polysilicon are planarized using a chemical mechanical polishing (CMP) process, which alleviates several photolithographic and film etch issues while freeing the designer from constraints that would otherwise be imposed by the underlying topography The entire stack, shown below in Figure 1, is fabricated on a 6-inch single crystal silicon wafer with a dielectric foundation of 0.63 µ m of oxide and 0.80 µ m of nitride. 2.0 µ m sacox3 (CMP) 0.4 µ m dimple3 backfill 0.3 µ m mmpoly0 0.80 µ m Silicon Nitride 1.5 µ m mmpoly2 0.3 µ m Sacox2 0.63 µ m Thermal SiO 2 2.0 µ m sacox1 0.5 µ m dimple1 gap Substrate 6 inch wafer, <100>, n-type- 2.25 µ m mmpoly4 2.25 µ m mmpoly3 0.2 µ m dimple4 backfill 1.0 µ m mmpoly1 2.0 µ m sacox4 (CMP) Figure 1. Drawing of the SUMMiT V structural and sacrificial layers
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3 The layers of polysilicon are designated from the substrate up as MMPOLY0 through MMPOLY4. Prefixing these levels with “MM” for micromechanical prevents confusion with layer names often used in CMOS processes. The sacrificial films are designated as SACOX1 through SACOX4, with the numerical suffix corresponding to the number of the subsequent layer of mechanical polysilicon that is deposited on a given oxide. The cross section in Figure 2 represents the various types of features that can be created from the 14 individual masks defined in Table 1 and the SUMMiT V fabrication sequence. Figure 2.
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This note was uploaded on 10/31/2010 for the course C 218 taught by Professor Clarknguyen during the Fall '09 term at Berkeley.

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SUMMiT_V_Dmanual_V1.3_MASTER_external - SUMMiT V Five Level...

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