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Unformatted text preview: (4) n+ S/D implant (5) Angle implant (tilted ~ 45 degrees ) to form n+ pockets. (6) Form TiSi 2 on S/D regions (7) Deposit CVD oxide and planarize surface by CMP (8) Selectively remove nitride dummy gate (9) Deposit CVD oxide and form oxide spacer by RIE (10) Grow gate oxide by thermal oxidation (11) Poly-Si gate deposition by CVD (12) Pattern Poly-Si gate The final device cross-section is illustrated below. Cu Let us start with a structure with oxide trench isolation already fabricated. Continue the process description with your interpretation of the process flow. Show the cross-sections at major processing steps. Process Description Cross-section 1) Starting structure ( oxide trench isolation) SiO2 SiO2 p-Si SiO2 CVD oxide SiO2 CVD oxide n+ n+ n+ n+ poly-Si gate Thermal gate oxide Oxide spacer Angled Implant n+ pocket Normal S/D implant Smallest feature printable by optical lithography...
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- Spring '03