243S2008-03

243S2008-03 - Sp2008 EECS 243 ADVANCED IC PROCESSING AND...

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Sp2008 N.CHEUNG EECS 243: ADVANCED IC PROCESSING AND LAYOUT Homework Assignment #3 (Due Feb 20, Wed 9:30am) Reading Assignment : Plummer et al Chapter 8 on ion implantation Problem 1 Accelerating voltage, effective implant energy, ion dose, and atomic concentration An ion implanter with an accelerating voltage of 50kV is used for implantation of the following ions into Si to a dose of 1E14 ions /cm 2 : 1) B(+) [ atomic boron ion, singly charged] 2) B(2+) [ atomic boron ion, doubly charged] 3) BF 2 (+) [molecular BF 2 ion, singly charged] 4) B 10 H 14 (+) [molecular B 10 H 14 ion, singly charged] Sketch qualitatively the implanted boron depth profiles [ boron atomic concentration versus depth ] of the four ions on the same plot. Indicate the peak positions and Use a gaussian profile approximation to estimate the peak concentration. You can use range data from textbooks or the SRIM program. Problem 2 Minimum dose required to create a continuous layer of amorphous Si The number of displaced substrate atoms per incident ion N D is E o 2E d where E o is the incoming ion energy
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This note was uploaded on 11/02/2010 for the course EECS 243 taught by Professor Ee243 during the Spring '03 term at Berkeley.

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243S2008-03 - Sp2008 EECS 243 ADVANCED IC PROCESSING AND...

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