243S2008-03-soln - N.CHEUNG, Sp2008 EE243 HW#3 Solutions...

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Unformatted text preview: N.CHEUNG, Sp2008 EE243 HW#3 Solutions Problem 1 Molecular Ion Implant Concentration The following Rp and Drp data are taken from the SRIM program Problem 2 Minimum dose required to create a continuous layer of amorphous Si N = dose N D R p = dose E o 2E d dE/dx | n E o = 3 10 14 /cm 2 5 10 9 eV/cm 1 2 15 eV = 5 10 22 /cm 3 . (the atomic density of Si !) Comment : If the displaced Si atoms do not comes back to the lattice sites, this dose is the threshold amorphization dose. In reality, a fraction of the displaced Si do come back to the lattice sites even at room temperature. The real amorphization dose is higher but with about the same order of magnitude. Higher implant temperature will need a higher amorphization dose due to the increased atomic hopping mobility. Ion Ion Energy Effective B+ Energy Rp (in A) DRp (in A) B atoms /ion Max conc = (B/ion) * 0.4*dose/DRp B (+) 50keV 50 keV 1762 623 1 6.4E+18 B(2+) 100keV 100 keV 3367 921 1 4.3E+18 BF2(+) 50keV 50*11/(11+2*19)= 11.7 keV50*11/(11+2*19)= 11....
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This note was uploaded on 11/02/2010 for the course EECS 243 taught by Professor Ee243 during the Spring '03 term at University of California, Berkeley.

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243S2008-03-soln - N.CHEUNG, Sp2008 EE243 HW#3 Solutions...

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