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Unformatted text preview: effects, depth of focus, and stray radiation, there is wider exposure of photoresist in the shallower regions, thus affecting resolution. 5.10) As lithography moves to shorter wavelengths, people will also need to use wider lens apertures to maintain resolution. This, along with a smaller length will greatly reduce the Depth of Focus. Depth of Focus causes great problems in underexposure and over exposure and these problems arise due to an uneven topography. Therefore, to reduce the over and exposure problems associated with photoresist, the wafers would have to be planarized before being exposed to radiation....
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This note was uploaded on 11/06/2010 for the course EE 440 taught by Professor Sanjaybanerjee during the Spring '08 term at University of Texas at Austin.
- Spring '08