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Unformatted text preview: INTEGRATED SENSORS EE 338L  Spring 2008 MIDTERM Tuesday, February 26 th STUDENT NAME: SIGNATURE: PROBLEM 1 Our goal in this problem to explore two amplifier structures which can potentially add two small signals x and y . Here is the 1 st proposed architecture: (a) Find out V as a function of x and y . You can assume that both transistors are identical , in the saturation region with ≠ λ , and have the same DC bias conditions. Solution: 1 2 1 2 2 2 o o out m m r r V g x g y = − − , and M1=M2. Therefore, ( ) 2 out m o x y V g r + = − where, 1 2 m m m g g g = = and 1 2 o o o r r r = = M1 bias I x y out V M2 Here is the 2 nd proposed architecture: (b) Find out V as a function of x and y . You can assume that the transistor is in the saturation region with ≠ λ and ≠ γ . Solution: The equivalent smallsignal model can be shown as follows. 1 1 1 1 1 1 1 1 1 ( ) = ( ) = ( ) out m mb o mb m o m m o V g x g y r g g x y r g g x y r η = − − − + − + Where 1 1 mb m g g η =...
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 Spring '09
 HASSIBI
 Amplifier, Electronic amplifier, Vout, intrinsic gain

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