17.MOSFET_basics

17.MOSFET_basics - 1 Improving fmax Improving Pay even more...

Info iconThis preview shows pages 1–9. Sign up to view the full content.

View Full Document Right Arrow Icon
1 Improving Improving f f max max • Pay even more attention to R b and C µ Final HF question: How far behind are Si MOSFETs?
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
2 HF MOS HF MOS What is this?
Background image of page 2
3 MOSFET basics MOSFET basics The relevant sections in Chapter 12 will be listed shortly 1. MOSFET fabrication 2. Formation of inversion layer 3. Surface Potential Model 4. Drain I-V characteristic
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
4
Background image of page 4
5 Si Si MOSFET features MOSFET features • 4 terminals • 2D-device • "The most abundant object made by mankind" y j
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
6 SUB-THRESHOLD CONDITION (DEPLETION) - - - - - - - - - y x + + + - - - V SB V GS - + i B ++ + i G - + V DS Depletion layer forms t Q i G G = t Q i B B = G G GG V Q C = G B BG V Q C =
Background image of page 6
7 ON CONDITION (Strong Inversion) - - - - - - - - - V SB V GS + - i B i S i D i G + + + + + + + + + + - y V DS x • Inversion layer forms t Q i G G = t Q i B B = t Q i nD D = t Q i nS S = G nS SG V Q C =
Background image of page 7

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
8 Decomposing the MOSFET Decomposing the MOSFET 1. Ignore S and D 2. Take vertical section from G B y x Note: •n + poly gate, or metal gate • work functions •ox ide±e lectron±aff in ity±and±E g y E C
Background image of page 8
Image of page 9
This is the end of the preview. Sign up to access the rest of the document.

This note was uploaded on 11/10/2010 for the course EECE 480 taught by Professor David during the Fall '09 term at UBC.

Page1 / 16

17.MOSFET_basics - 1 Improving fmax Improving Pay even more...

This preview shows document pages 1 - 9. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online