18.MOSFET_models

18.MOSFET_models - 1 MOSFET basics Sections 12.1, 12.2,...

Info iconThis preview shows pages 1–6. Sign up to view the full content.

View Full Document Right Arrow Icon
1 MOSFET basics MOSFET basics Sections 12.1, 12.2, 12.3, 12.4 of the course text 1. Summary of first MOSFET lecture 2. Surface Potential Model 3. Drain I-V characteristic 4. SPICE model 5. Comparison of PSP and SPICE 6. Inclusion of velocity saturation
Background image of page 1

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
2 Si Si MOSFET recapitulation MOSFET recapitulation y j •E y due to V GB causes depletion and inversion •E x due to V DS causes reduction in inversion (effect is greatest near the drain) •V DS gives rise to a channel potential V C (x)
Background image of page 2
3 Surface potential and the PSP model Surface potential and the PSP model q φ B
Background image of page 3

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
4 Introducing the channel potential Introducing the channel potential THE GRADUAL CHANNEL APPROXIMATION
Background image of page 4
5 One expression for One expression for Q Q s Intermediate step in solving Poisson for ψ , gives the electric field E • Gauss' Law relates E to Q s , the charge per unit area in the semiconductor •Q s is f(x) because of V CB (x) semiconductor semiconductor,but also, surface (see fragment below) What are the units of Q s ?
Background image of page 5

Info iconThis preview has intentionally blurred sections. Sign up to view the full version.

View Full DocumentRight Arrow Icon
Image of page 6
This is the end of the preview. Sign up to access the rest of the document.

Page1 / 16

18.MOSFET_models - 1 MOSFET basics Sections 12.1, 12.2,...

This preview shows document pages 1 - 6. Sign up to view the full document.

View Full Document Right Arrow Icon
Ask a homework question - tutors are online