13 major concerns for digital CMOS3 major concerns for digital CMOS1. Increasing IONvia mobility improvement2. Reducing gate leakage via thicker, high-kdielectrics3. Controlling VTand Isubtvia suppression of the short-channel effect• L cannot be further reduced without adversely affecting VT0and Isubt• TOX cannot be further reduced without causing excessive gate leakage current• Some other way needs to be found to increase IONRemedies for CMOS45:1,3 started at CMOS902 is new to CMOS45
has intentionally blurred sections.
Sign up to view the full version.