1
3 major concerns for digital CMOS
3 major concerns for digital CMOS
1. Increasing I
ON
via mobility improvement
2. Reducing gate leakage via thicker, high-
k
dielectrics
3. Controlling V
T
and I
subt
via suppression of
the short-channel effect
• L cannot be further reduced without adversely affecting V
T
0
and I
subt
• TOX cannot be further reduced without causing excessive gate leakage current
• Some other way needs to be found to increase I
ON
Remedies for CMOS45:
1,3 started at
CMOS90
2 is new to
CMOS45
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