20.CMOS_digital - 1 3 major concerns for digital CMOS 3...

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Unformatted text preview: 1 3 major concerns for digital CMOS 3 major concerns for digital CMOS 1. Increasing I ON via mobility improvement 2. Reducing gate leakage via thicker, high- k dielectrics 3. Controlling V T and I subt via suppression of the short-channel effect • L cannot be further reduced without adversely affecting V T and I subt • TOX cannot be further reduced without causing excessive gate leakage current • Some other way needs to be found to increase I ON Remedies for CMOS45: 1,3 started at CMOS90 2 is new to CMOS45 2 Alvin Loke 3 Lithography scaling: reducing L and Lithography scaling: reducing L and y y j pFET nFET y j Where is L? The effect of changing L/y j What is happening? 4 Which model parameter is changing? Which model parameter is changing? 5 • The change in characteristics with y j occurs at short L. • At short L, the characteristics also change with L. • These changes are known as the SHORT-CHANNEL EFFECT ....
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This note was uploaded on 11/10/2010 for the course EECE 480 taught by Professor David during the Fall '09 term at The University of British Columbia.

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20.CMOS_digital - 1 3 major concerns for digital CMOS 3...

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